摘要
An InGaAs submonolayer (SML) quantum-dot photonic-crystal light-emitting diode (QD PhC-LED) with for fiber-optic applications is reported. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (<1 ML) and GaAs. A maximum CW output power of 0.34 mW at 20 mA has been obtained in the 980 nm range.
原文 | English |
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頁(從 - 到) | 688-691 |
頁數 | 4 |
期刊 | Microelectronics Reliability |
卷 | 50 |
發行號 | 5 |
DOIs | |
出版狀態 | Published - 5月 2010 |