InGaAs metal-oxide-semiconductor FETs with self-aligned Ni-Alloy source/drain

Keyphrases

• Self-aligned 100%
• InGaAs 100%
• Metal Oxide Semiconductor 100%
• InGaAs MOSFET 100%
• Ni Alloy 100%
• Oxide Semiconductor FET 100%
• Gate Dielectric 50%
• P-n Junction 50%
• Schottky Barrier Height 50%
• Junction Device 50%
• Interface State Density 50%
• Conductance Method 50%
• ALD Al2O3 50%
• InGaAs Alloy 50%

Engineering

• Field Effect Transistor 100%
• Indium Gallium Arsenide 100%
• Metal Oxide Semiconductor 100%
• Ni Alloy 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 50%
• Interface State 25%
• Gate Dielectric 25%
• Barrier Height 25%
• Schottky Barrier 25%

Material Science

• Field Effect Transistor 100%
• Indium Gallium Arsenide 100%
• Metal Oxide 100%
• Oxide Semiconductor 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 50%
• Density 25%
• Al2O3 25%
• Schottky Barrier 25%
• Dielectric Material 25%