@inproceedings{e05d89bc531a43e08873d1ddb12fbccf,
title = "InGaAs metal-oxide-semiconductor FETs with self-aligned Ni-Alloy source/drain",
abstract = " N-type InGaAs MOSFETs with self-aligned nickel-InGaAs alloy and ex-situ ALD Al2O3 as gate dielectrics was successfully fabricated. The InGaAs MOSFETs exhibit an S/D resistance (Rsd) that is lower than that in P-N junction devices due to the low Schottky barrier height and the peak mobility was about 1138 cm 2 /V-s and the interface state density (Dit) was about 10 12 cm -2 eV -1 at Et = Ev + 0.6 eV by using full-conductance method. ",
author = "Wang, {Shin Yuan} and Chao-Hsin Chien and Lin, {Jin Ju} and Chang, {Chun Yen}",
year = "2015",
month = aug,
day = "25",
doi = "10.1109/IPFA.2015.7224414",
language = "English",
series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "415--418",
booktitle = "Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015",
address = "美國",
note = "22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 ; Conference date: 29-06-2015 Through 02-07-2015",
}