InGaAs Junctionless FinFETs with Self-Aligned Ni-InGaAs S/D

Po Chun Chang, Chih Jen Hsiao, Franky Juanda Lumbantoruan, Chia Hsun Wu, Yen Ku Lin, Yueh Chin Lin, Simon M. Sze, Edward Yi Chang*

*此作品的通信作者

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

In this paper, the InGaAs junctionless (JL) FinFET with notable electrical performance is demonstrated. The device with Wfin down to 20 nm, EOT of 2.1 nm, and LG = 60 nm shows high ION = 188 μA μ m at VDD = 0.5 V and IOFF = 100 nA μ m, ION/IOFF = 5 × 105, DIBL = 106 mV/V and SS = 96 mV/dec. The device also exhibits a decent extrinsic transconductance (Gm) of 1142 μS μm at VDS of 0.5 V. This high performance is attributed to the moderate doping concentration to ensure the channel carriers could be effectively depleted and the low RSD$ realized by self-aligned Ni-InGaAs alloy S/D. Furthermore, we also examine the temperature dependence of the main electrical parameters of the JL transistor.

原文English
文章編號8419250
頁(從 - 到)856-860
頁數5
期刊IEEE Journal of the Electron Devices Society
6
DOIs
出版狀態Published - 1 一月 2018

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