Influences of the residual argon gas and thermal annealing on Ta 2O5 and SiO2 thin film filters

Wen Jen Liu; Chih Min Chen; Yin-Chieh Lai

doi:10.1117/12.590055

Influences of the residual argon gas and thermal annealing on Ta 2O5 and SiO2 thin film filters

Wen Jen Liu^*, Chih Min Chen, Yin-Chieh Lai

^*此作品的通信作者

光電工程學系

研究成果: Conference article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

The influences of the residual argon gas and thermal annealing processes on the optical property, stress, compositional and microstructure evolution of Tantalum pentaoxide (Ta₂O₅) and silicon dioxides (SiO ₂) were investigated. Tantalum pentaoxide and silicon dioxides optical thin films were deposited on the quartz glass substrate by argon ion beam assisted deposition. It was observed by X-ray diffraction (XRD) that the amorphous structure existed in all of the Ta₂O₅ thin films. The Ta₂O₅ thin films indicated that the ratio value of oxygen to tantalum was insufficient and the residual argon gas in the thin films might result in film and device instabilities.

原文	English
文章編號	40
頁（從 - 到）	273-284
頁數	12
期刊	Proceedings of SPIE - The International Society for Optical Engineering
卷	5723
DOIs	https://doi.org/10.1117/12.590055
出版狀態	Published - 21 7月 2005
事件	Optical Components and Materials II - San Jose, CA, 美國持續時間: 24 1月 2005 → 25 1月 2005

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title = "Influences of the residual argon gas and thermal annealing on Ta 2O5 and SiO2 thin film filters",

abstract = "The influences of the residual argon gas and thermal annealing processes on the optical property, stress, compositional and microstructure evolution of Tantalum pentaoxide (Ta2O5) and silicon dioxides (SiO 2) were investigated. Tantalum pentaoxide and silicon dioxides optical thin films were deposited on the quartz glass substrate by argon ion beam assisted deposition. It was observed by X-ray diffraction (XRD) that the amorphous structure existed in all of the Ta2O5 thin films. The Ta2O5 thin films indicated that the ratio value of oxygen to tantalum was insufficient and the residual argon gas in the thin films might result in film and device instabilities.",

keywords = "Atomic force microscopy (AFM), Dense wavelength division multiplexing (DWDM), Ion beam assisted deposition (IBAD), Optical properties, Thin film filter (TFF)",

author = "Liu, {Wen Jen} and Chen, {Chih Min} and Yin-Chieh Lai",

year = "2005",

month = jul,

day = "21",

doi = "10.1117/12.590055",

language = "English",

volume = "5723",

pages = "273--284",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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publisher = "SPIE",

note = "Optical Components and Materials II ; Conference date: 24-01-2005 Through 25-01-2005",

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TY - JOUR

T1 - Influences of the residual argon gas and thermal annealing on Ta 2O5 and SiO2 thin film filters

AU - Liu, Wen Jen

AU - Chen, Chih Min

AU - Lai, Yin-Chieh

PY - 2005/7/21

Y1 - 2005/7/21

N2 - The influences of the residual argon gas and thermal annealing processes on the optical property, stress, compositional and microstructure evolution of Tantalum pentaoxide (Ta2O5) and silicon dioxides (SiO 2) were investigated. Tantalum pentaoxide and silicon dioxides optical thin films were deposited on the quartz glass substrate by argon ion beam assisted deposition. It was observed by X-ray diffraction (XRD) that the amorphous structure existed in all of the Ta2O5 thin films. The Ta2O5 thin films indicated that the ratio value of oxygen to tantalum was insufficient and the residual argon gas in the thin films might result in film and device instabilities.

AB - The influences of the residual argon gas and thermal annealing processes on the optical property, stress, compositional and microstructure evolution of Tantalum pentaoxide (Ta2O5) and silicon dioxides (SiO 2) were investigated. Tantalum pentaoxide and silicon dioxides optical thin films were deposited on the quartz glass substrate by argon ion beam assisted deposition. It was observed by X-ray diffraction (XRD) that the amorphous structure existed in all of the Ta2O5 thin films. The Ta2O5 thin films indicated that the ratio value of oxygen to tantalum was insufficient and the residual argon gas in the thin films might result in film and device instabilities.

KW - Atomic force microscopy (AFM)

KW - Dense wavelength division multiplexing (DWDM)

KW - Ion beam assisted deposition (IBAD)

KW - Optical properties

KW - Thin film filter (TFF)

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U2 - 10.1117/12.590055

DO - 10.1117/12.590055

M3 - Conference article

AN - SCOPUS:21844453185

SN - 0277-786X

VL - 5723

SP - 273

EP - 284

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 40

T2 - Optical Components and Materials II

Y2 - 24 January 2005 through 25 January 2005

ER -

Influences of the residual argon gas and thermal annealing on Ta 2O5 and SiO2 thin film filters

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