Keyphrases
Metal-organic Chemical Vapor Deposition (MOCVD)
100%
Temperature Effect
100%
Ramp Rate
100%
GaN Buffer
100%
Overlayer
100%
Temperature Ramping
100%
Buffer Layer
28%
GaN Epilayer
28%
Low Temperature
14%
Annealing
14%
Atomic Force Microscopy
14%
Surface Morphology
14%
Full Width at Half Maximum
14%
Crystalline Properties
14%
Band Edge
14%
Morphological Properties
14%
Rate Effect
14%
X-ray Measurements
14%
Two-step Growth
14%
Three-dimensional Island
14%
Coalescence Mechanism
14%
Role of Temperature
14%
Hexagonal Morphology
14%
GaN-on-sapphire
14%
Pre-evaporation
14%
Engineering
Chemical Vapor Deposition
100%
Vapor Deposition
100%
Buffer Layer
100%
Band Edge
14%
Low-Temperature
14%
Surface Morphology
14%
Atomic Force Microscopy
14%
Ray Measurement
14%
Material Science
Chemical Vapor Deposition
100%
Buffer Layer
100%
Epilayers
28%
Surface (Surface Science)
28%
Surface Morphology
14%
Sapphire
14%
Atomic Force Microscopy
14%