Influences of indium fluctuation to the carrier transport, auger recombination, and efficiency droop

Yuh Renn Wu, Shu Ting Yeh, Da Wei Lin, Chi Kang Li, Hao-Chung Kuo, James S. Speck

研究成果: Conference contribution同行評審

7 引文 斯高帕斯(Scopus)

摘要

Our recent preliminary studies show that the nanoscale indium fluctuation in InGaN quantum well LED plays an important key role in carrier transport, radiative recombination, Auger, and droop effects. In this paper, we further examine the influence indium fluctuation for different degree of fluctuation, auger coefficients, and non-radiative lifetime. The influence of different AlGaN electronic blocking layer will be discussed in this paper. The commercial grade LED will be used for comparison to examine the model accuracy.

原文English
主出版物標題13th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2013
頁面111-112
頁數2
DOIs
出版狀態Published - 23 十二月 2013
事件13th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2013 - Vancouver, BC, Canada
持續時間: 19 八月 201322 八月 2013

出版系列

名字13th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2013

Conference

Conference13th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2013
國家/地區Canada
城市Vancouver, BC
期間19/08/1322/08/13

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