Influence of X-valley superlattice on electron blocking by multiquantum barriers

Shun-Tung Yen; C. P. Lee; Chia-Ming Tsai; H. R. Chen

doi:10.1063/1.112546

Influence of X-valley superlattice on electron blocking by multiquantum barriers

Shun-Tung Yen^*, C. P. Lee, Chia-Ming Tsai, H. R. Chen

^*此作品的通信作者

電子研究所

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

摘要

Four n-i-n GaAs/AlGaAs diodes have been used to demonstrate that at room temperature the carrier blocking is influenced by the X-valley superlattice in a multiquantum barrier. The diode with a Γ-X crossover multiquantum barrier has a current at least three orders lower than the corresponding diode with only a bulk barrier. However, diodes without Γ-X crossover barriers have resistance as low as 10 Ω in spite of whether a multiquantum barrier exists or not. This indicates that the X-valley superlattice plays an important role in blocking the current flowing across/through a multiquantum barrier.

原文	English
頁（從 - 到）	2720-2722
頁數	3
期刊	Applied Physics Letters
卷	65
發行號	21
DOIs	https://doi.org/10.1063/1.112546
出版狀態	Published - 1994

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abstract = "Four n-i-n GaAs/AlGaAs diodes have been used to demonstrate that at room temperature the carrier blocking is influenced by the X-valley superlattice in a multiquantum barrier. The diode with a Γ-X crossover multiquantum barrier has a current at least three orders lower than the corresponding diode with only a bulk barrier. However, diodes without Γ-X crossover barriers have resistance as low as 10 Ω in spite of whether a multiquantum barrier exists or not. This indicates that the X-valley superlattice plays an important role in blocking the current flowing across/through a multiquantum barrier.",

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AU - Tsai, Chia-Ming

AU - Chen, H. R.

PY - 1994

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N2 - Four n-i-n GaAs/AlGaAs diodes have been used to demonstrate that at room temperature the carrier blocking is influenced by the X-valley superlattice in a multiquantum barrier. The diode with a Γ-X crossover multiquantum barrier has a current at least three orders lower than the corresponding diode with only a bulk barrier. However, diodes without Γ-X crossover barriers have resistance as low as 10 Ω in spite of whether a multiquantum barrier exists or not. This indicates that the X-valley superlattice plays an important role in blocking the current flowing across/through a multiquantum barrier.

AB - Four n-i-n GaAs/AlGaAs diodes have been used to demonstrate that at room temperature the carrier blocking is influenced by the X-valley superlattice in a multiquantum barrier. The diode with a Γ-X crossover multiquantum barrier has a current at least three orders lower than the corresponding diode with only a bulk barrier. However, diodes without Γ-X crossover barriers have resistance as low as 10 Ω in spite of whether a multiquantum barrier exists or not. This indicates that the X-valley superlattice plays an important role in blocking the current flowing across/through a multiquantum barrier.

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JO - Applied Physics Letters

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Influence of X-valley superlattice on electron blocking by multiquantum barriers

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