Influence of thermodynamic factors on growth of AlAs1-xsbx alloys

Wei-Kuo Chen; Ming Ta Chin

doi:10.1143/JJAP.33.L1370

Influence of thermodynamic factors on growth of AlAs_1-xsbx alloys

Wei-Kuo Chen, Ming Ta Chin

電子物理學系

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

摘要

Epitaxial layers of AlAs_₁-_{_x}Sb_{_x} have been prepared by metalorganic vapor phase deposition (MOCVD) in a horizontal, atmospheric-pressure quartz reactor. The influences of the V/lII ratio and the input partial pressure of trimethylantimony were systematically studied. The experimental results are in good agreement with the calculated ones, based on thermodynamic considerations, which implies that the growth of AlAsSb in MOCVD is controlled predominantly by thermodynamics.

原文	English
頁（從 - 到）	1370-1373
頁數	4
期刊	Japanese journal of applied physics
卷	33
發行號	10A
DOIs	https://doi.org/10.1143/JJAP.33.L1370
出版狀態	Published - 10月 1994

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10.1143/JJAP.33.L1370

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AB - Epitaxial layers of AlAs1-xSbx have been prepared by metalorganic vapor phase deposition (MOCVD) in a horizontal, atmospheric-pressure quartz reactor. The influences of the V/lII ratio and the input partial pressure of trimethylantimony were systematically studied. The experimental results are in good agreement with the calculated ones, based on thermodynamic considerations, which implies that the growth of AlAsSb in MOCVD is controlled predominantly by thermodynamics.

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KW - Thermodynamics

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Influence of thermodynamic factors on growth of AlAs1-xsbx alloys

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Influence of thermodynamic factors on growth of AlAs_1-xsbx alloys