Indium nitride films have been successfully grown on (0001) sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) using TMln and NH3 as source precursors. Experimental results indicated that pregrowth treatments, such as buffer layer growth, nitridation temperature and nitridation duration have dramatic effects on the growth of the InN films. For films nitridated at 1,000°C for 40 min without any buffer layer growth, we obtained an InN film quality with Hall mobility, carrier concentration and line width of Raman E2 mode of 270cm2/V·s, 5 × 10 19cm-3 and 4.5 cm-1, respectively, which is among the best quality ever reported for such type of film grown by MOVPE.
|頁（從 - 到）||645-648|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 1999|