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Influence of postdeposition annealing on physical and electrical properties of high-k Yb
2
TiO
5
gate dielectrics
Tung Ming Pan
*
, Li Chen Yen, Chien Hung Chiang,
Tien-Sheng Chao
*
此作品的通信作者
電子物理學系
研究成果
:
Conference contribution
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2
TiO
5
gate dielectrics」主題。共同形成了獨特的指紋。
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Keyphrases
Gate Dielectric
100%
Electrical Properties
100%
Post-deposition Annealing
100%
Physical Properties
100%
Y2SiO5
100%
Annealing
33%
X Ray Diffraction
33%
Atomic Force Microscopy
33%
X-ray Photoelectron Spectroscopy
33%
Dielectric
33%
Capacitance
33%
Gate Leakage Current
33%
Structure-property Relationships
33%
Annealing Temperature
33%
Morphological Characteristics
33%
Growth Conditions
33%
Si (100) Substrate
33%
Interface State Density
33%
Chemical Features
33%
Reactive Co-sputtering
33%
Small Densities
33%
Low Hysteresis
33%
Hysteresis Voltage
33%
Equivalent Thickness
33%
Material Science
Physical Property
100%
Dielectric Material
100%
Density
33%
Film
33%
X-Ray Diffraction
33%
X-Ray Photoelectron Spectroscopy
33%
Capacitance
33%
Morphology
33%
Phase Composition
33%
Atomic Force Microscopy
33%