Influence of postdeposition annealing on physical and electrical properties of high-k Yb₂TiO₅ gate dielectrics

Engineering & Materials Science

• Interface states 100%
• Gate dielectrics 92%
• Atomic force microscopy 82%
• X ray photoelectron spectroscopy 79%
• Leakage currents 70%
• Electric properties 69%
• Annealing 64%
• X ray diffraction 64%
• Hysteresis 61%
• Physical properties 58%
• Capacitance 55%
• Substrates 45%
• Chemical analysis 42%
• Electric potential 33%
• Temperature 26%