Influence of Post-Ion-Implantation Annealing Temperature on the Characteristics of Gate Oxide on 4H Silicon Carbide

Li Jung Lin, Bing Yue Tsui*

*此作品的通信作者

研究成果: Chapter同行評審

摘要

The effect of post-ion implantation annealing on the properties of the SiO2/4H-SiC interface is examined in this paper. It is observed that the surface roughness degrades after the hightemperature Ar annealing, but the oxidation process after the high temperature annealing can improve the surface roughness. To better understand the effect of high-temperature annealing on the gate oxide, the reliability of gate oxide is further studied. The results show that although the surface roughness degrades after high-temperature annealing, the interface state density, tunneling barrier height, breakdown field, and critical electric field for the 10-year lifetime of the thermally grown gate oxide do not degrade.

原文English
主出版物標題Materials Science Forum
發行者Trans Tech Publications Ltd
頁面107-111
頁數5
DOIs
出版狀態Published - 2023

出版系列

名字Materials Science Forum
1090
ISSN(列印)0255-5476
ISSN(電子)1662-9752

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