Influence of polarity on carrier transport in semipolar (2021̄) and (202̄1) multiple-quantum-well light-emitting diodes

Yoshinobu Kawaguchi*, Chia Yen Huang, Yuh Renn Wu, Qimin Yan, Chih Chien Pan, Yuji Zhao, Shinichi Tanaka, Kenji Fujito, Daniel Feezell, Chris G. Van De Walle, Steven P. Denbaars, Shuji Nakamura

*此作品的通信作者

研究成果: Article同行評審

52 引文 斯高帕斯(Scopus)

摘要

We investigate the influence of polarity on carrier transport in single-quantum-well and multiple-quantum-well (MQW) light-emitting diodes (LEDs) grown on the semipolar (202̄1) and (2021̄) orientations of free-standing GaN. For semipolar MQW LEDs with the opposite polarity to conventional Ga-polar c-plane LEDs, the polarization-related electric field in the QWs results in an additional energy barrier for carriers to escape the QWs. We show that semipolar (2021̄) MQW LEDs with the same polarity to Ga-polar c-plane LEDs have a more uniform carrier distribution and lower forward voltage than (202̄1) MQW LEDs.

原文English
文章編號231110
期刊Applied Physics Letters
100
發行號23
DOIs
出版狀態Published - 4 六月 2012

指紋

深入研究「Influence of polarity on carrier transport in semipolar (2021̄) and (202̄1) multiple-quantum-well light-emitting diodes」主題。共同形成了獨特的指紋。

引用此