@inproceedings{a24bab1622004dde908543a7432d9ce5,
title = "Influence of passivation layers on characteristics of high mobility amorphous indium-zinc-tin-oxide thin-film transistors",
abstract = " We investigated the influence of passivation-layer deposition on the characteristics of a-InZnSnO thin-film transistors (TFTs). The threshold voltage (V th ) of the TFTs shifted markedly as a result of the ion bombardment induced by the passivation layers above. By adjusting the post annealing temperature, the performance of the TFTs can be modulated. The a-InZnSnO TFTs after passivation exhibited good performance with a field-effect mobility of 21.34 cm 2 /Vs, a threshold voltage of-5.03V, and a subthreshold slope of 0.52 V/decade. ",
author = "Po-Tsun Liu and Chang, {C. H.} and Zheng, {G. T.} and Chang, {C. C.}",
year = "2016",
month = oct,
doi = "10.1149/07510.0163ecst",
language = "English",
volume = "75",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "10",
pages = "163--168",
editor = "Y. Kuo",
booktitle = "Thin Film Transistors 13, TFT 13",
edition = "10",
note = "Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting ; Conference date: 02-10-2016 Through 07-10-2016",
}