TY - GEN
T1 - Influence of hydrogen on the germanium incorporation in a-Si 1-x Ge x :H for thin-film solar cell application
AU - Wang, C. M.
AU - Huang, Y. T.
AU - Yen, K. H.
AU - Hsu, H. J.
AU - Hsu, C. H.
AU - Zan, Hsiao-Wen
AU - Tsai, C. C.
PY - 2010
Y1 - 2010
N2 - In this work, we examined the Ge incorporation and the accompanied defect formation during PECVD deposition of hydrogenated amorphous silicon-germanium alloys (a-Si1-xGex:H). In particular, we studied the effect of hydrogen on film growth, defect formation, Ge and Si incorporation efficiencies, and the H-bonding configuration. Our results indicate that hydrogen has a strong effect on improving the a-Si1-xGex:H film quality and the Ge incorporation in a-Si1-xGex:H. With adequate hydrogen dilution, the a-Si1-xGex:H thin-film quality significantly improved. However, excessive hydrogen dilution degraded the film properties. A number of analytical tools were employed, including FTIR, XPS, UV-Visible spectroscopy, photoconductivity, etc. The a-Si1-xGex:H material having 24% Ge content and a bangap of 1.61ev produced the solar cell with a conversion efficiency of 7.07%.
AB - In this work, we examined the Ge incorporation and the accompanied defect formation during PECVD deposition of hydrogenated amorphous silicon-germanium alloys (a-Si1-xGex:H). In particular, we studied the effect of hydrogen on film growth, defect formation, Ge and Si incorporation efficiencies, and the H-bonding configuration. Our results indicate that hydrogen has a strong effect on improving the a-Si1-xGex:H film quality and the Ge incorporation in a-Si1-xGex:H. With adequate hydrogen dilution, the a-Si1-xGex:H thin-film quality significantly improved. However, excessive hydrogen dilution degraded the film properties. A number of analytical tools were employed, including FTIR, XPS, UV-Visible spectroscopy, photoconductivity, etc. The a-Si1-xGex:H material having 24% Ge content and a bangap of 1.61ev produced the solar cell with a conversion efficiency of 7.07%.
UR - http://www.scopus.com/inward/record.url?scp=78650369317&partnerID=8YFLogxK
U2 - 10.1557/PROC-1245-A04-02
DO - 10.1557/PROC-1245-A04-02
M3 - Conference contribution
AN - SCOPUS:78650369317
SN - 9781605112220
T3 - Materials Research Society Symposium Proceedings
SP - 85
EP - 90
BT - Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2010
PB - Materials Research Society
T2 - 2010 MRS Spring Meeting
Y2 - 5 April 2010 through 9 April 2010
ER -