Influence of hydrogen on the germanium incorporation in a-Si 1-x Ge x :H for thin-film solar cell application

C. M. Wang, Y. T. Huang, K. H. Yen, H. J. Hsu, C. H. Hsu, Hsiao-Wen Zan, C. C. Tsai

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

In this work, we examined the Ge incorporation and the accompanied defect formation during PECVD deposition of hydrogenated amorphous silicon-germanium alloys (a-Si1-xGex:H). In particular, we studied the effect of hydrogen on film growth, defect formation, Ge and Si incorporation efficiencies, and the H-bonding configuration. Our results indicate that hydrogen has a strong effect on improving the a-Si1-xGex:H film quality and the Ge incorporation in a-Si1-xGex:H. With adequate hydrogen dilution, the a-Si1-xGex:H thin-film quality significantly improved. However, excessive hydrogen dilution degraded the film properties. A number of analytical tools were employed, including FTIR, XPS, UV-Visible spectroscopy, photoconductivity, etc. The a-Si1-xGex:H material having 24% Ge content and a bangap of 1.61ev produced the solar cell with a conversion efficiency of 7.07%.

原文English
主出版物標題Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2010
發行者Materials Research Society
頁面85-90
頁數6
ISBN(列印)9781605112220
DOIs
出版狀態Published - 2010
事件2010 MRS Spring Meeting - San Francisco, CA, United States
持續時間: 5 4月 20109 4月 2010

出版系列

名字Materials Research Society Symposium Proceedings
1245
ISSN(列印)0272-9172

Conference

Conference2010 MRS Spring Meeting
國家/地區United States
城市San Francisco, CA
期間5/04/109/04/10

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