Influence of h-BN substrate on the Electrical performance of MoSe2 FETs

The unique physical features and transmission characteristics of two-dimensional materials have been widely recognized by the scientific community and extensively explored in recent years to find an alternative to silicon semiconductors' physical size restrictions. Two-dimensional (2D) materials, such as Molybdenum Diselenide (MoSe2) shows a promising role in the next generation of semiconductor devices for advanced electronics and optoelectronics. In this work, we reported the fabrication of field-effect transistor using mechanically exfoliated Molybdenum Diselenide. To explore the intrinsic behavior of Molybdenum Diselenide, layered hexagonal Boron Nitride (h-BN) was used as a substrate and dielectric. h-BN enhances the electron concentration and reduces the columbic scattering offered by SiO2 interface resultant enhancement in the mobility and On/Off ratio by a factor of ~23 and ~200 times respectively. This study signifies the role of h-BN as a better substrate for two-dimensional material-based FETs.