This study invests the effect of barrier growth temperature on the properties of InGaN/GaN MQW. Increase the growth temperature will reduce the well thickness and result in the blue shift of the PL peak. This blue shift in PL peak wavelength may be resulted from the stain occure during varying barrier growth temperature rather than only the reduce the well width. Moreover, we introduce a phase separation enhance layer into InGaN/GaN MQW. This layer join with the variation of barrier growth temperature will enhance the phase separation in InGaN/GaN MQW. There are two peaks clearly revealed in RT PL spectra. The higher energy peak might originate the InGaN quasi-wetting layer on the GaN barrier surface. The other one is interpreted of localize state at potential fluctuation owning to phase separation.
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|Proceedings of SPIE - The International Society for Optical Engineering
|Published - 1 1月 2001
|Light-Emitting Diodes: Research, Manufacturing, and Applications V - San Jose, CA, United States
持續時間: 24 1月 2001 → 25 1月 2001