Influence of barrier growth temperature on the properties of InGaN/GaN quantum well

T. C. Wen*, Wei-I Lee

*此作品的通信作者

研究成果: Article同行評審

30 引文 斯高帕斯(Scopus)

摘要

In this study we investigate the effect of barrier growth temperature on the properties of InGaN/GaN multiple quantum wells. Double-crystal X-ray diffraction of MQW structures indicates that increasing the barrier growth temperature will reduce the well thickness. However, the photoluminescence peak wavelength shift is greater than the change of in the effective bandgap due to the reduction of well width. In addition to the reduction of well width, the determination of the origin of the significant blue shift in the photoluminescence peak wavelength should also take the strain effect into account.

原文English
頁(從 - 到)5302-5303
頁數2
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
40
發行號9 A
DOIs
出版狀態Published - 9月 2001

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