We have studied the inelastic electron dephasing scattering times, τi, in disordered CuxGe100-x (35 ≤ x ≤ 60) alloys between 1 and 15 K. The values of τi -1 (approx. Tp), and especially the exponent of temperature p, are extracted from weak localization studies. We find that the value of p continuously decreases from approx. 3 to approx. 1 as x gradually decreases from 60 to 35. Our observation is understood in terms of a crossover of the inelastic electron dephasing in impure metals from e-ph scattering to critical e-e scattering as the disorder greatly increases and the system moves significantly toward the mobility edge.
|頁（從 - 到）||460-461|
|期刊||Physica B: Condensed Matter|
|出版狀態||Published - 11 五月 2000|
|事件||22nd International Conference on Low Temperature Physics (LT-22) - Helsinki, Finl|
持續時間: 4 八月 1999 → 11 八月 1999