Inelastic electron dephasing times in CuxGe100-x alloys

Juhn-Jong Lin*, P. J. Sheng, Shih-ying Hsu

*此作品的通信作者

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)

摘要

We have studied the inelastic electron dephasing scattering times, τi, in disordered CuxGe100-x (35 ≤ x ≤ 60) alloys between 1 and 15 K. The values of τi -1 (approx. Tp), and especially the exponent of temperature p, are extracted from weak localization studies. We find that the value of p continuously decreases from approx. 3 to approx. 1 as x gradually decreases from 60 to 35. Our observation is understood in terms of a crossover of the inelastic electron dephasing in impure metals from e-ph scattering to critical e-e scattering as the disorder greatly increases and the system moves significantly toward the mobility edge.

原文English
頁(從 - 到)460-461
頁數2
期刊Physica B: Condensed Matter
280
發行號1-4
DOIs
出版狀態Published - 11 五月 2000
事件22nd International Conference on Low Temperature Physics (LT-22) - Helsinki, Finl
持續時間: 4 八月 199911 八月 1999

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