摘要
A novel and simple method to suppress the boron penetration in the BF2+-implanted polycrystalline silicon gate is presented by using the inductive-coupling-nitrogen-plasma (ICNP) process. A nitrogen layer was found at the SiO2/Si interface by using this method. The result shows that the sample with the ICNP treatment exhibits a good suppression of boron penetration and improved electrical characteristics.
原文 | English |
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頁(從 - 到) | 55-56 |
頁數 | 2 |
期刊 | Applied Physics Letters |
卷 | 70 |
發行號 | 1 |
DOIs | |
出版狀態 | Published - 6 1月 1997 |