Indium Zinc Oxide Nanosheet Transistor with 2 nm Channel Thickness for Monolithic Three-Dimensional Integrated Circuit

Zhen Hao Li, Tsung Che Chiang, Yu Chen Chen, Hsin Hua Lee, Yu Ting Tsai, Po Tsun Liu*

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

We have successfully fabricated an amorphous indium zinc oxide (a-IZO) thin film transistor (TFT) with a 2 nm-thick nanosheet channel, which demonstrated an impressive mobility of 84 cm2/V-s. By shrinking the channel length and width, the a-IZO TFT exhibited a high drain current density of 1.6 mA/ μ m at V _D = 1 V, a sharper subthreshold swing of 72 mV/dec, and better drain-induced barrier lowering (DIBL) of 94 mV/V. By integrating p-type low-temperature poly-Si (LTPS) TFT and n-type a-IZO TFT, we have designed a heterogeneous complementary inverter that can achieve a high voltage gain of 99 V/V, while consuming only a few picowatts of power at V _ DD = 1.5 V. All thermal budgets used in this study are compatible with the back-end-of-line (BEOL) process, making it a suitable approach for fabricating monolithic three-dimensional integrated circuits (M3D-ICs).

原文English
頁(從 - 到)1312-1315
頁數4
期刊Ieee Electron Device Letters
44
發行號8
DOIs
出版狀態Published - 1 8月 2023

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