Indium phosphide on gallium arsenide heteroepitaxy with interface layer grown by flow-rate modulation epitaxy

Wei-Kuo Chen; J. F. Chen; Jyh-Cheng Chen; H. M. Kim; L. Anthony; C. R. Wie; P. L. Liu

doi:10.1063/1.101795

Indium phosphide on gallium arsenide heteroepitaxy with interface layer grown by flow-rate modulation epitaxy

Wei-Kuo Chen^*, J. F. Chen, Jyh-Cheng Chen, H. M. Kim, L. Anthony, C. R. Wie, P. L. Liu

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摘要

We have grown and characterized heteroepitaxial films of InP on GaAs. We demonstrate that by using flow-rate modulation epitaxy to grow the interface layer in a two-step process, we can improve the quality of heteroepitaxy films. The full widths at half maximum of the x-ray rocking curve and the 10 K photoluminescence spectrum for a 6.2-μm-thick InP/GaAs are 144 arcsec and 1.28 meV, respectively.

原文	English
頁（從 - 到）	749-751
頁數	3
期刊	Applied Physics Letters
卷	55
發行號	8
DOIs	https://doi.org/10.1063/1.101795
出版狀態	Published - 1 12月 1989

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10.1063/1.101795

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abstract = "We have grown and characterized heteroepitaxial films of InP on GaAs. We demonstrate that by using flow-rate modulation epitaxy to grow the interface layer in a two-step process, we can improve the quality of heteroepitaxy films. The full widths at half maximum of the x-ray rocking curve and the 10 K photoluminescence spectrum for a 6.2-μm-thick InP/GaAs are 144 arcsec and 1.28 meV, respectively.",

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T1 - Indium phosphide on gallium arsenide heteroepitaxy with interface layer grown by flow-rate modulation epitaxy

AU - Chen, Wei-Kuo

AU - Chen, J. F.

AU - Chen, Jyh-Cheng

AU - Kim, H. M.

AU - Anthony, L.

AU - Wie, C. R.

AU - Liu, P. L.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - We have grown and characterized heteroepitaxial films of InP on GaAs. We demonstrate that by using flow-rate modulation epitaxy to grow the interface layer in a two-step process, we can improve the quality of heteroepitaxy films. The full widths at half maximum of the x-ray rocking curve and the 10 K photoluminescence spectrum for a 6.2-μm-thick InP/GaAs are 144 arcsec and 1.28 meV, respectively.

AB - We have grown and characterized heteroepitaxial films of InP on GaAs. We demonstrate that by using flow-rate modulation epitaxy to grow the interface layer in a two-step process, we can improve the quality of heteroepitaxy films. The full widths at half maximum of the x-ray rocking curve and the 10 K photoluminescence spectrum for a 6.2-μm-thick InP/GaAs are 144 arcsec and 1.28 meV, respectively.

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DO - 10.1063/1.101795

M3 - Article

AN - SCOPUS:0142136411

SN - 0003-6951

VL - 55

SP - 749

EP - 751

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Indium phosphide on gallium arsenide heteroepitaxy with interface layer grown by flow-rate modulation epitaxy

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