Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells

Yuji Zhao*, Qimin Yan, Chia Yen Huang, Shih Chieh Huang, Po Shan Hsu, Shinichi Tanaka, Chih Chien Pan, Yoshinobu Kawaguchi, Kenji Fujito, Chris G. Van De Walle, James S. Speck, Steven P. Denbaars, Shuji Nakamura, Daniel Feezell

*此作品的通信作者

研究成果: Article同行評審

151 引文 斯高帕斯(Scopus)

摘要

We report indium incorporation properties on various nonpolar and semipolar free-standing GaN substrates. Electroluminescence characterization and x-ray diffraction (XRD) analysis indicate that the semipolar (20 2̄1̄) and (11 2̄2̄) planes have the highest indium incorporation rate among the studied planes. We also show that both indium composition and polarization-related electric fields impact the emission wavelength of the quantum wells (QWs). The different magnitudes and directions of the polarization-related electric fields for each orientation result in different potential profiles for the various semipolar and nonpolar QWs, leading to different emission wavelengths at a given indium composition.

原文English
文章編號201108
期刊Applied Physics Letters
100
發行號20
DOIs
出版狀態Published - 14 五月 2012

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