Indium-gallium-zinc oxide transparent thin-film transistors on the flexible stainless steel foil

Chin Yi Hsu*, Tse Hsien Lee, Pei Yi Kao, Huang-Ming Chen, Huai An Li, Chi Neng Mo, Kevin Chou

*此作品的通信作者

研究成果: Paper同行評審

摘要

Amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) were fabricated on the stainless steel (SS) substrate. The surface roughness of stainless steel (SS) substrate was reduced to 0.63 nm after planarization treatment. The mobility of IGZO TFT device was found at 6.45 cm2/Vs with Ion/Ioff ratio >105 at planar state. The mobility of TFT device dropped to 1.23 cm2/Vs at bending state (R =3 cm) but recovered after relaxing to planar state.

原文English
出版狀態Published - 1 12月 2009
事件2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 - Taipei, Taiwan
持續時間: 27 4月 200930 4月 2009

Conference

Conference2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009
國家/地區Taiwan
城市Taipei
期間27/04/0930/04/09

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