Amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) were fabricated on the stainless steel (SS) substrate. The surface roughness of stainless steel (SS) substrate was reduced to 0.63 nm after planarization treatment. The mobility of IGZO TFT device was found at 6.45 cm2/Vs with Ion/Ioff ratio >105 at planar state. The mobility of TFT device dropped to 1.23 cm2/Vs at bending state (R =3 cm) but recovered after relaxing to planar state.
|出版狀態||Published - 1 12月 2009|
|事件||2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 - Taipei, Taiwan|
持續時間: 27 4月 2009 → 30 4月 2009
|Conference||2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009|
|期間||27/04/09 → 30/04/09|