Indium-gallium-zinc oxide transparent thin-film transistors on the flexible stainless steel foil

Chin Yi Hsu; Tse Hsien Lee; Pei Yi Kao; Huang-Ming Chen; Huai An Li; Chi Neng Mo; Kevin Chou

Indium-gallium-zinc oxide transparent thin-film transistors on the flexible stainless steel foil

Chin Yi Hsu^*, Tse Hsien Lee, Pei Yi Kao, Huang-Ming Chen, Huai An Li, Chi Neng Mo, Kevin Chou

^*此作品的通信作者

光電工程學系

研究成果: Paper › 同行評審

摘要

Amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) were fabricated on the stainless steel (SS) substrate. The surface roughness of stainless steel (SS) substrate was reduced to 0.63 nm after planarization treatment. The mobility of IGZO TFT device was found at 6.45 cm²/Vs with I_on/I_off ratio >10⁵ at planar state. The mobility of TFT device dropped to 1.23 cm²/Vs at bending state (R =3 cm) but recovered after relaxing to planar state.

原文	English
出版狀態	Published - 1 12月 2009
事件	2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 - Taipei, 台灣持續時間: 27 4月 2009 → 30 4月 2009

Conference

Conference	2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009
國家/地區	台灣
城市	Taipei
期間	27/04/09 → 30/04/09

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title = "Indium-gallium-zinc oxide transparent thin-film transistors on the flexible stainless steel foil",

abstract = "Amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) were fabricated on the stainless steel (SS) substrate. The surface roughness of stainless steel (SS) substrate was reduced to 0.63 nm after planarization treatment. The mobility of IGZO TFT device was found at 6.45 cm2/Vs with Ion/Ioff ratio >105 at planar state. The mobility of TFT device dropped to 1.23 cm2/Vs at bending state (R =3 cm) but recovered after relaxing to planar state.",

author = "Hsu, {Chin Yi} and Lee, {Tse Hsien} and Kao, {Pei Yi} and Huang-Ming Chen and Li, {Huai An} and Mo, {Chi Neng} and Kevin Chou",

year = "2009",

month = dec,

day = "1",

language = "English",

note = "2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 ; Conference date: 27-04-2009 Through 30-04-2009",

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TY - CONF

T1 - Indium-gallium-zinc oxide transparent thin-film transistors on the flexible stainless steel foil

AU - Hsu, Chin Yi

AU - Lee, Tse Hsien

AU - Kao, Pei Yi

AU - Chen, Huang-Ming

AU - Li, Huai An

AU - Mo, Chi Neng

AU - Chou, Kevin

PY - 2009/12/1

Y1 - 2009/12/1

N2 - Amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) were fabricated on the stainless steel (SS) substrate. The surface roughness of stainless steel (SS) substrate was reduced to 0.63 nm after planarization treatment. The mobility of IGZO TFT device was found at 6.45 cm2/Vs with Ion/Ioff ratio >105 at planar state. The mobility of TFT device dropped to 1.23 cm2/Vs at bending state (R =3 cm) but recovered after relaxing to planar state.

AB - Amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) were fabricated on the stainless steel (SS) substrate. The surface roughness of stainless steel (SS) substrate was reduced to 0.63 nm after planarization treatment. The mobility of IGZO TFT device was found at 6.45 cm2/Vs with Ion/Ioff ratio >105 at planar state. The mobility of TFT device dropped to 1.23 cm2/Vs at bending state (R =3 cm) but recovered after relaxing to planar state.

UR - http://www.scopus.com/inward/record.url?scp=79952060914&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:79952060914

T2 - 2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009

Y2 - 27 April 2009 through 30 April 2009

ER -

Indium-gallium-zinc oxide transparent thin-film transistors on the flexible stainless steel foil

摘要

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