Indium-gallium-zinc-oxide based resistive switching memory for system-on-glass application

Yang Shun Fan; Ching Hui Hsu; Li Feng Teng; Ming Chang Yu; Po-Tsun Liu

Indium-gallium-zinc-oxide based resistive switching memory for system-on-glass application

Yang Shun Fan^*, Ching Hui Hsu, Li Feng Teng, Ming Chang Yu, Po-Tsun Liu

^*此作品的通信作者

光電工程學系

研究成果: Conference contribution › 同行評審

摘要

A new bipolar resistive random access memory (RRAM) based on amorphous InGaZnO was proposed with one order memory window (high to low resistance state) over two hundreds switching cycles. Besides, a conceptual co-operation scheme was also demonstrated between a-IGZO RRAM and TFT for the system-on-Glass application.

原文	English
主出版物標題	Society for Information Display - 18th International Display Workshops 2011, IDW'11
頁面	575-577
頁數	3
出版狀態	Published - 1 12月 2011
事件	18th International Display Workshops 2011, IDW 2011 - Nagoya, Japan 持續時間: 7 12月 2011 → 9 12月 2011

出版系列

名字	Proceedings of the International Display Workshops
卷	1
ISSN（列印）	1883-2490

Conference

Conference	18th International Display Workshops 2011, IDW 2011
國家/地區	Japan
城市	Nagoya
期間	7/12/11 → 9/12/11

UN SDG

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其它文件與鏈接

Link to publication in Scopus

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@inproceedings{5bbd110d32884bf491fa10b76d8eb22a,

title = "Indium-gallium-zinc-oxide based resistive switching memory for system-on-glass application",

abstract = "A new bipolar resistive random access memory (RRAM) based on amorphous InGaZnO was proposed with one order memory window (high to low resistance state) over two hundreds switching cycles. Besides, a conceptual co-operation scheme was also demonstrated between a-IGZO RRAM and TFT for the system-on-Glass application.",

author = "Fan, {Yang Shun} and Hsu, {Ching Hui} and Teng, {Li Feng} and Yu, {Ming Chang} and Po-Tsun Liu",

year = "2011",

month = dec,

day = "1",

language = "English",

isbn = "9781622761906",

series = "Proceedings of the International Display Workshops",

pages = "575--577",

booktitle = "Society for Information Display - 18th International Display Workshops 2011, IDW'11",

note = "null ; Conference date: 07-12-2011 Through 09-12-2011",

}

Fan, YS, Hsu, CH, Teng, LF, Yu, MC & Liu, P-T 2011, Indium-gallium-zinc-oxide based resistive switching memory for system-on-glass application. 於 Society for Information Display - 18th International Display Workshops 2011, IDW'11. Proceedings of the International Display Workshops, 卷 1, 頁 575-577, 18th International Display Workshops 2011, IDW 2011, Nagoya, Japan, 7/12/11.

TY - GEN

T1 - Indium-gallium-zinc-oxide based resistive switching memory for system-on-glass application

AU - Fan, Yang Shun

AU - Hsu, Ching Hui

AU - Teng, Li Feng

AU - Yu, Ming Chang

AU - Liu, Po-Tsun

PY - 2011/12/1

Y1 - 2011/12/1

N2 - A new bipolar resistive random access memory (RRAM) based on amorphous InGaZnO was proposed with one order memory window (high to low resistance state) over two hundreds switching cycles. Besides, a conceptual co-operation scheme was also demonstrated between a-IGZO RRAM and TFT for the system-on-Glass application.

AB - A new bipolar resistive random access memory (RRAM) based on amorphous InGaZnO was proposed with one order memory window (high to low resistance state) over two hundreds switching cycles. Besides, a conceptual co-operation scheme was also demonstrated between a-IGZO RRAM and TFT for the system-on-Glass application.

UR - http://www.scopus.com/inward/record.url?scp=84870707935&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84870707935

SN - 9781622761906

T3 - Proceedings of the International Display Workshops

SP - 575

EP - 577

BT - Society for Information Display - 18th International Display Workshops 2011, IDW'11

Y2 - 7 December 2011 through 9 December 2011

ER -

Indium-gallium-zinc-oxide based resistive switching memory for system-on-glass application

摘要

出版系列

Conference

UN SDG

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