@article{b5c1e53a3d944bb6ae0c9934792d1257,
title = "Increase in the Efficiency of III-Nitride Micro-LEDs: Atomic-Layer Deposition and Etching",
abstract = "MICRO-LEDs ( n-LEDs) HAVE been engaged in the next-generation display technology and evolved for various applications from several electronics manufacturers and institutions. The area of n-LEDs (less than 10 # 10 nm2) is desired for the high pixelsper-inch (PPI) value of the microdisplay, but the sidewall effect from the etching process will drop the quantum efficiency ",
author = "Liu, {An Chen} and Singh, {Konthoujam James} and Huang, {Yu Ming} and Tanveer Ahmed and Liou, {Fang Jyun} and Liou, {Yu Hau} and Ting, {Chao Cheng} and Chien-Chung Lin and Yi-Ming Li and Seiji Samukawa and Hao-Chung Kuo",
note = "Publisher Copyright: {\textcopyright} 2007-2011 IEEE.",
year = "2021",
month = jun,
doi = "10.1109/MNANO.2021.3066393",
language = "English",
volume = "15",
pages = "18--34",
journal = "IEEE Nanotechnology Magazine",
issn = "1932-4510",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",
}