Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection

Jian Hsing Lee; Yeh Jen Huang; Li Yang Hong; Li Fan Chen; Yeh Ning Jou; Shin Cheng Lin; Walter Wohlmuth; Chih Cherng Liao; Ching Ho Li; Shoa Chang Huang; Ke Horng Chen

doi:10.1109/IRPS48227.2022.9764596

Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection

Jian Hsing Lee^*, Yeh Jen Huang, Li Yang Hong, Li Fan Chen, Yeh Ning Jou, Shin Cheng Lin, Walter Wohlmuth, Chih Cherng Liao, Ching Ho Li, Shoa Chang Huang, Ke Horng Chen

^*此作品的通信作者

電機工程學系

研究成果: Conference contribution › 同行評審

15 引文斯高帕斯（Scopus）

摘要

In this paper, a simple circuit is incorporated in a 650V E-mode GaN HEMT process technology to protect all terminals against ESD stress from any direction. Even in the worst case, with the gate subjected to negative ESD pulse with respect to grounded drain, the 650V E-mode HEMT can still pass 5kV HBM.

原文	English
主出版物標題	2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	2B31-2B36
ISBN（電子）	9781665479509
DOIs	https://doi.org/10.1109/IRPS48227.2022.9764596
出版狀態	Published - 2022
事件	2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Dallas, 美國持續時間: 27 3月 2022 → 31 3月 2022

出版系列

名字	IEEE International Reliability Physics Symposium Proceedings
卷	2022-March
ISSN（列印）	1541-7026

Conference

Conference	2022 IEEE International Reliability Physics Symposium, IRPS 2022
國家/地區	美國
城市	Dallas
期間	27/03/22 → 31/03/22

存取文件

10.1109/IRPS48227.2022.9764596

其它文件與鏈接

Link to publication in Scopus

引用此

Lee, J. H., Huang, Y. J., Hong, L. Y., Chen, L. F., Jou, Y. N., Lin, S. C., Wohlmuth, W., Liao, C. C., Li, C. H., Huang, S. C., & Chen, K. H. (2022). Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection. 於 2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings (頁 2B31-2B36). (IEEE International Reliability Physics Symposium Proceedings; 卷 2022-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS48227.2022.9764596

Lee, Jian Hsing ; Huang, Yeh Jen ; Hong, Li Yang 等. / Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection. 2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2022. 頁 2B31-2B36 (IEEE International Reliability Physics Symposium Proceedings).

@inproceedings{289f1eef8a584bca84b420636fc78eac,

title = "Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection",

abstract = "In this paper, a simple circuit is incorporated in a 650V E-mode GaN HEMT process technology to protect all terminals against ESD stress from any direction. Even in the worst case, with the gate subjected to negative ESD pulse with respect to grounded drain, the 650V E-mode HEMT can still pass 5kV HBM.",

keywords = "Electrostatic-Discharge (ESD), High Electron Mobility Transistor (HEMT), Human body Model (HBM), Transmission-Line Pulse (TLP), Two-Dimensional Electron Gas (2D-EG)",

author = "Lee, {Jian Hsing} and Huang, {Yeh Jen} and Hong, {Li Yang} and Chen, {Li Fan} and Jou, {Yeh Ning} and Lin, {Shin Cheng} and Walter Wohlmuth and Liao, {Chih Cherng} and Li, {Ching Ho} and Huang, {Shoa Chang} and Chen, {Ke Horng}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE International Reliability Physics Symposium, IRPS 2022 ; Conference date: 27-03-2022 Through 31-03-2022",

year = "2022",

doi = "10.1109/IRPS48227.2022.9764596",

language = "English",

series = "IEEE International Reliability Physics Symposium Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "2B31--2B36",

booktitle = "2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings",

address = "美國",

}

Lee, JH, Huang, YJ, Hong, LY, Chen, LF, Jou, YN, Lin, SC, Wohlmuth, W, Liao, CC, Li, CH, Huang, SC & Chen, KH 2022, Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection. 於 2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings. IEEE International Reliability Physics Symposium Proceedings, 卷 2022-March, Institute of Electrical and Electronics Engineers Inc., 頁 2B31-2B36, 2022 IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, 美國, 27/03/22. https://doi.org/10.1109/IRPS48227.2022.9764596

Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection. / Lee, Jian Hsing; Huang, Yeh Jen; Hong, Li Yang 等.
2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2022. p. 2B31-2B36 (IEEE International Reliability Physics Symposium Proceedings; 卷 2022-March).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection

AU - Lee, Jian Hsing

AU - Huang, Yeh Jen

AU - Hong, Li Yang

AU - Chen, Li Fan

AU - Jou, Yeh Ning

AU - Lin, Shin Cheng

AU - Wohlmuth, Walter

AU - Liao, Chih Cherng

AU - Li, Ching Ho

AU - Huang, Shoa Chang

AU - Chen, Ke Horng

PY - 2022

Y1 - 2022

N2 - In this paper, a simple circuit is incorporated in a 650V E-mode GaN HEMT process technology to protect all terminals against ESD stress from any direction. Even in the worst case, with the gate subjected to negative ESD pulse with respect to grounded drain, the 650V E-mode HEMT can still pass 5kV HBM.

AB - In this paper, a simple circuit is incorporated in a 650V E-mode GaN HEMT process technology to protect all terminals against ESD stress from any direction. Even in the worst case, with the gate subjected to negative ESD pulse with respect to grounded drain, the 650V E-mode HEMT can still pass 5kV HBM.

KW - Electrostatic-Discharge (ESD)

KW - High Electron Mobility Transistor (HEMT)

KW - Human body Model (HBM)

KW - Transmission-Line Pulse (TLP)

KW - Two-Dimensional Electron Gas (2D-EG)

UR - http://www.scopus.com/inward/record.url?scp=85130720689&partnerID=8YFLogxK

U2 - 10.1109/IRPS48227.2022.9764596

DO - 10.1109/IRPS48227.2022.9764596

M3 - Conference contribution

AN - SCOPUS:85130720689

T3 - IEEE International Reliability Physics Symposium Proceedings

SP - 2B31-2B36

BT - 2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IEEE International Reliability Physics Symposium, IRPS 2022

Y2 - 27 March 2022 through 31 March 2022

ER -

Lee JH, Huang YJ, Hong LY, Chen LF, Jou YN, Lin SC 等. Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection. 於 2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2022. p. 2B31-2B36. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS48227.2022.9764596

Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection

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