摘要
Semiconductor light emitters based on quantum dot (QD) have recently been used in the fabrication of mode-locked lasers owing to their broad gain spectrum as well as fast carrier dynamics [1-3]. For GaAs-based InAs QD lasers at 1.3 μm range, mode-locking behaviours of two-section devices with cavity length between 800 and 8000 μm, corresponding to round-trip frequency between 5 and 50 GHz, were investigated to show transform-limited pulses with low uncorrelated timing jitter [2]. While for InP-based InAs QD lasers at 1.5 μm range, self-mode-locking in one-section configuration without saturable absorption was reported to show repetition rate as high as 45 and 134 GHz, corresponding to cavity length of 950 and 340 μm, respectively [1,3].
原文 | English |
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頁數 | 1 |
出版狀態 | Published - 14 6月 2009 |
事件 | The European Conference on Lasers and Electro-Optics, CLEO_Europe 2009 - Munich, 德國 持續時間: 14 6月 2009 → 19 6月 2009 |
Conference
Conference | The European Conference on Lasers and Electro-Optics, CLEO_Europe 2009 |
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國家/地區 | 德國 |
城市 | Munich |
期間 | 14/06/09 → 19/06/09 |