Incomplete mode-locking in one-section QD lasers with ultra-long cavity

Gray Lin, Hsu Chieh Cheng, Kun Feng Lin, Rong Xuan, Chien Peng Lee

    研究成果: Poster同行評審

    摘要

    Semiconductor light emitters based on quantum dot (QD) have recently been used in the fabrication of mode-locked lasers owing to their broad gain spectrum as well as fast carrier dynamics [1-3]. For GaAs-based InAs QD lasers at 1.3 μm range, mode-locking behaviours of two-section devices with cavity length between 800 and 8000 μm, corresponding to round-trip frequency between 5 and 50 GHz, were investigated to show transform-limited pulses with low uncorrelated timing jitter [2]. While for InP-based InAs QD lasers at 1.5 μm range, self-mode-locking in one-section configuration without saturable absorption was reported to show repetition rate as high as 45 and 134 GHz, corresponding to cavity length of 950 and 340 μm, respectively [1,3].
    原文English
    頁數1
    出版狀態Published - 14 6月 2009
    事件The European Conference on Lasers and Electro-Optics, CLEO_Europe 2009 - Munich, Germany
    持續時間: 14 6月 200919 6月 2009

    Conference

    ConferenceThe European Conference on Lasers and Electro-Optics, CLEO_Europe 2009
    國家/地區Germany
    城市Munich
    期間14/06/0919/06/09

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