TY - GEN
T1 - InAs/In1-xGaxAs composite channel high electron mobility transistors for high speed applications
AU - Chang, Edward Yi
AU - Kuol, Chien I.
AU - Hsu, Heng-Tung
AU - Chang, Chia Yuan
PY - 2008
Y1 - 2008
N2 - 80-nm InAs channel HEMTs with different lattice matched sub-channels, In0.53Ga0.47As and In0.7Ga0.3As, have been fabricated. The device with InAs/ In0.7Ga0.3As composite channel exhibits high drain current density (1101 mA/mm), and high transconductance (1605 mS/mm) at drain bias VDS = 0.8 V. The high current gain cutoff frequency (ft) of 360 GHz and maximum oscillation frequency (fmax) of 380 GHz of the device with InAs/ In0.7Ga0.3As were obtained at VDS = 0.7 V in comparison to the InAs/In0.53Ga0.47 As channel HEMTs withft = 310 and fmax = 330 GHz. This is due to the high electron mobility and electron confinement in the InAs/ In0.7Ga0.3As channel. In addition, a low gate delay time 0.84 psec wasobtained at VDS = 0.5 V. The excellent performance of the InAs channel HEMTs demonstrated in this study shows great potential for high speed and very low power logic applications with the optimal design of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite channel.
AB - 80-nm InAs channel HEMTs with different lattice matched sub-channels, In0.53Ga0.47As and In0.7Ga0.3As, have been fabricated. The device with InAs/ In0.7Ga0.3As composite channel exhibits high drain current density (1101 mA/mm), and high transconductance (1605 mS/mm) at drain bias VDS = 0.8 V. The high current gain cutoff frequency (ft) of 360 GHz and maximum oscillation frequency (fmax) of 380 GHz of the device with InAs/ In0.7Ga0.3As were obtained at VDS = 0.7 V in comparison to the InAs/In0.53Ga0.47 As channel HEMTs withft = 310 and fmax = 330 GHz. This is due to the high electron mobility and electron confinement in the InAs/ In0.7Ga0.3As channel. In addition, a low gate delay time 0.84 psec wasobtained at VDS = 0.5 V. The excellent performance of the InAs channel HEMTs demonstrated in this study shows great potential for high speed and very low power logic applications with the optimal design of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite channel.
UR - http://www.scopus.com/inward/record.url?scp=66649131962&partnerID=8YFLogxK
U2 - 10.1109/EMICC.2008.4772263
DO - 10.1109/EMICC.2008.4772263
M3 - Conference contribution
AN - SCOPUS:66649131962
SN - 9782874870071
T3 - 2008 European Microwave Integrated Circuit Conference, EuMIC 2008
SP - 198
EP - 201
BT - 2008 European Microwave Integrated Circuit Conference, EuMIC 2008
T2 - 2008 European Microwave Integrated Circuit Conference, EuMIC 2008
Y2 - 27 October 2008 through 31 October 2008
ER -