InAs/GaAs quantum-dot saturable absorber for a diode-pumped passively mode-locked Nd:YVO4 laser at 1342 nm

Kuan-Wei Su; H. C. Lai; A. Li; Yung-Fu Chen; Kai-Feng Huang

doi:10.1364/OL.30.001482

InAs/GaAs quantum-dot saturable absorber for a diode-pumped passively mode-locked Nd:YVO₄ laser at 1342 nm

Kuan-Wei Su^*, H. C. Lai, A. Li, Yung-Fu Chen, Kai-Feng Huang

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

32 引文斯高帕斯（Scopus）

摘要

We report that InAs/GaAs quantum dots were developed to be saturable absorbers as well as output couplers in diode-pumped passively mode-locked Nd:YVO₄ lasers at 1342 nm. With an incident pump power of 12.6 W, an average output power of 0.85 W with a mode-locked pulse width of 26 ps at a repetition rate of 152 MHz was obtained.

原文	English
頁（從 - 到）	1482-1484
頁數	3
期刊	Optics Letters
卷	30
發行號	12
DOIs	https://doi.org/10.1364/OL.30.001482
出版狀態	Published - 15 6月 2005

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abstract = "We report that InAs/GaAs quantum dots were developed to be saturable absorbers as well as output couplers in diode-pumped passively mode-locked Nd:YVO4 lasers at 1342 nm. With an incident pump power of 12.6 W, an average output power of 0.85 W with a mode-locked pulse width of 26 ps at a repetition rate of 152 MHz was obtained.",

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AU - Chen, Yung-Fu

AU - Huang, Kai-Feng

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AB - We report that InAs/GaAs quantum dots were developed to be saturable absorbers as well as output couplers in diode-pumped passively mode-locked Nd:YVO4 lasers at 1342 nm. With an incident pump power of 12.6 W, an average output power of 0.85 W with a mode-locked pulse width of 26 ps at a repetition rate of 152 MHz was obtained.

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InAs/GaAs quantum-dot saturable absorber for a diode-pumped passively mode-locked Nd:YVO4 laser at 1342 nm

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InAs/GaAs quantum-dot saturable absorber for a diode-pumped passively mode-locked Nd:YVO₄ laser at 1342 nm