InAs thin-channel high-electron-mobility transistors with very high current-gain cutoff frequency for emerging submillimeter-wave applications

Edward Yi Chang; Chien I. Kuo; Heng-Tung Hsu; Che Yang Chiang; Yasuyuki Miyamoto

doi:10.7567/APEX.6.034001

InAs thin-channel high-electron-mobility transistors with very high current-gain cutoff frequency for emerging submillimeter-wave applications

Edward Yi Chang^*, Chien I. Kuo, Heng-Tung Hsu, Che Yang Chiang, Yasuyuki Miyamoto

^*此作品的通信作者

研究成果: Article › 同行評審

109 引文斯高帕斯（Scopus）

摘要

60nm InAs high-electron-mobility transistors (HEMTs) with a thin channel, a thin InAlAs barrier layer, and a very high gate stem structure have been fabricated and characterized. The thickness of the channel, as well as that of the InAlAs barrier layer, was reduced to 5 nm. A stem height of 250nm with a Pt-buried gate was used in the device configuration to reduce the parasitics. A high DC transconductance of 2114mS/mm and a current-gain cutoff frequency (f_T) of 710 GHz were achieved at V_DS = 0:5 V.

原文	English
文章編號	034001
期刊	Applied Physics Express
卷	6
發行號	3
DOIs	https://doi.org/10.7567/APEX.6.034001
出版狀態	Published - 1 3月 2013

存取文件

10.7567/APEX.6.034001

其它文件與鏈接

Link to publication in Scopus

引用此

@article{3b9753c69e494438afdc1224393f666e,

title = "InAs thin-channel high-electron-mobility transistors with very high current-gain cutoff frequency for emerging submillimeter-wave applications",

abstract = "60nm InAs high-electron-mobility transistors (HEMTs) with a thin channel, a thin InAlAs barrier layer, and a very high gate stem structure have been fabricated and characterized. The thickness of the channel, as well as that of the InAlAs barrier layer, was reduced to 5 nm. A stem height of 250nm with a Pt-buried gate was used in the device configuration to reduce the parasitics. A high DC transconductance of 2114mS/mm and a current-gain cutoff frequency (fT) of 710 GHz were achieved at VDS = 0:5 V.",

author = "Chang, {Edward Yi} and Kuo, {Chien I.} and Heng-Tung Hsu and Chiang, {Che Yang} and Yasuyuki Miyamoto",

year = "2013",

month = mar,

day = "1",

doi = "10.7567/APEX.6.034001",

language = "English",

volume = "6",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "3",

}

TY - JOUR

T1 - InAs thin-channel high-electron-mobility transistors with very high current-gain cutoff frequency for emerging submillimeter-wave applications

AU - Chang, Edward Yi

AU - Kuo, Chien I.

AU - Hsu, Heng-Tung

AU - Chiang, Che Yang

AU - Miyamoto, Yasuyuki

PY - 2013/3/1

Y1 - 2013/3/1

N2 - 60nm InAs high-electron-mobility transistors (HEMTs) with a thin channel, a thin InAlAs barrier layer, and a very high gate stem structure have been fabricated and characterized. The thickness of the channel, as well as that of the InAlAs barrier layer, was reduced to 5 nm. A stem height of 250nm with a Pt-buried gate was used in the device configuration to reduce the parasitics. A high DC transconductance of 2114mS/mm and a current-gain cutoff frequency (fT) of 710 GHz were achieved at VDS = 0:5 V.

AB - 60nm InAs high-electron-mobility transistors (HEMTs) with a thin channel, a thin InAlAs barrier layer, and a very high gate stem structure have been fabricated and characterized. The thickness of the channel, as well as that of the InAlAs barrier layer, was reduced to 5 nm. A stem height of 250nm with a Pt-buried gate was used in the device configuration to reduce the parasitics. A high DC transconductance of 2114mS/mm and a current-gain cutoff frequency (fT) of 710 GHz were achieved at VDS = 0:5 V.

UR - http://www.scopus.com/inward/record.url?scp=84875498990&partnerID=8YFLogxK

U2 - 10.7567/APEX.6.034001

DO - 10.7567/APEX.6.034001

M3 - Article

AN - SCOPUS:84875498990

SN - 1882-0778

VL - 6

JO - Applied Physics Express

JF - Applied Physics Express

IS - 3

M1 - 034001

ER -

InAs thin-channel high-electron-mobility transistors with very high current-gain cutoff frequency for emerging submillimeter-wave applications

摘要

存取文件

其它文件與鏈接

指紋

引用此