摘要
60nm InAs high-electron-mobility transistors (HEMTs) with a thin channel, a thin InAlAs barrier layer, and a very high gate stem structure have been fabricated and characterized. The thickness of the channel, as well as that of the InAlAs barrier layer, was reduced to 5 nm. A stem height of 250nm with a Pt-buried gate was used in the device configuration to reduce the parasitics. A high DC transconductance of 2114mS/mm and a current-gain cutoff frequency (fT) of 710 GHz were achieved at VDS = 0:5 V.
原文 | English |
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文章編號 | 034001 |
期刊 | Applied Physics Express |
卷 | 6 |
發行號 | 3 |
DOIs | |
出版狀態 | Published - 3月 2013 |