InAs thin-channel high-electron-mobility transistors with very high current-gain cutoff frequency for emerging submillimeter-wave applications

Edward Yi Chang; Chien I. Kuo; Heng-Tung Hsu; Che Yang Chiang; Yasuyuki Miyamoto

doi:10.7567/APEX.6.034001

InAs thin-channel high-electron-mobility transistors with very high current-gain cutoff frequency for emerging submillimeter-wave applications

Edward Yi Chang^*, Chien I. Kuo, Heng-Tung Hsu, Che Yang Chiang, Yasuyuki Miyamoto

^*此作品的通信作者

研究成果: Article › 同行評審

125 引文斯高帕斯（Scopus）

摘要

60nm InAs high-electron-mobility transistors (HEMTs) with a thin channel, a thin InAlAs barrier layer, and a very high gate stem structure have been fabricated and characterized. The thickness of the channel, as well as that of the InAlAs barrier layer, was reduced to 5 nm. A stem height of 250nm with a Pt-buried gate was used in the device configuration to reduce the parasitics. A high DC transconductance of 2114mS/mm and a current-gain cutoff frequency (f_T) of 710 GHz were achieved at V_DS = 0:5 V.

原文	English
文章編號	034001
期刊	Applied Physics Express
卷	6
發行號	3
DOIs	https://doi.org/10.7567/APEX.6.034001
出版狀態	Published - 3月 2013

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abstract = "60nm InAs high-electron-mobility transistors (HEMTs) with a thin channel, a thin InAlAs barrier layer, and a very high gate stem structure have been fabricated and characterized. The thickness of the channel, as well as that of the InAlAs barrier layer, was reduced to 5 nm. A stem height of 250nm with a Pt-buried gate was used in the device configuration to reduce the parasitics. A high DC transconductance of 2114mS/mm and a current-gain cutoff frequency (fT) of 710 GHz were achieved at VDS = 0:5 V.",

author = "Chang, {Edward Yi} and Kuo, {Chien I.} and Heng-Tung Hsu and Chiang, {Che Yang} and Yasuyuki Miyamoto",

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AU - Chang, Edward Yi

AU - Kuo, Chien I.

AU - Hsu, Heng-Tung

AU - Chiang, Che Yang

AU - Miyamoto, Yasuyuki

PY - 2013/3

Y1 - 2013/3

N2 - 60nm InAs high-electron-mobility transistors (HEMTs) with a thin channel, a thin InAlAs barrier layer, and a very high gate stem structure have been fabricated and characterized. The thickness of the channel, as well as that of the InAlAs barrier layer, was reduced to 5 nm. A stem height of 250nm with a Pt-buried gate was used in the device configuration to reduce the parasitics. A high DC transconductance of 2114mS/mm and a current-gain cutoff frequency (fT) of 710 GHz were achieved at VDS = 0:5 V.

AB - 60nm InAs high-electron-mobility transistors (HEMTs) with a thin channel, a thin InAlAs barrier layer, and a very high gate stem structure have been fabricated and characterized. The thickness of the channel, as well as that of the InAlAs barrier layer, was reduced to 5 nm. A stem height of 250nm with a Pt-buried gate was used in the device configuration to reduce the parasitics. A high DC transconductance of 2114mS/mm and a current-gain cutoff frequency (fT) of 710 GHz were achieved at VDS = 0:5 V.

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InAs thin-channel high-electron-mobility transistors with very high current-gain cutoff frequency for emerging submillimeter-wave applications

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