InAs high electron mobility transistors with buried gate for ultralow-power-consumption low-noise amplifier application

An InAs/In_0.7Ga_0.3As composite channel high-electron-mobility transistor (HEMT) fabricated using the gate sinking technique was realized for ultralow-power-consumption low-noise application. The device has a very high transconductance of 1900 mS/mm at a drain voltage of 0.5 V. The saturated drain-source current of the device is 1066 mA/mm. A current gain cutoff frequency (f_T) of 113 GHz and a maximum oscillation frequency (f_max) of 110 GHz were achieved at only drain bias voltage V_ds = 0.1 V. The 0.08 × 40μm² device demonstrated a minimum noise figure of 0.82 dB and a 14 dB associated gain at 17GHz with 1.14mW DC power consumption.