InAs-channel metal-oxide-semiconductor HEMTs with atomic-layer-deposited Al₂O₃ Gate Dielectric

Keyphrases

• Al2O3 Gate Dielectric 100%
• InAs Channel 100%
• Metal Oxide Semiconductor 100%
• Atomic Layer Deposited 100%
• Aluminum Oxide 66%
• MOS-HEMT 66%
• High Performance 33%
• Measurement Results 33%
• Low Power 33%
• Gate Dielectric 33%
• Transistor 33%
• Transistor Device 33%
• High-k Gate Dielectrics 33%
• High-speed Applications 33%
• Device Structure 33%
• Device Performance 33%

Material Science

• Al2O3 100%
• Metal Oxide 100%
• Oxide Semiconductor 100%
• Dielectric Material 100%
• Transistor 50%
• Electron Mobility 25%
• Type Metal 25%

Engineering

• Gate Dielectric 100%
• Atomic Layer 100%
• Metal Oxide Semiconductor 100%
• Speed Application 25%
• Device Structure 25%
• Device Performance 25%