@inproceedings{bab6a0a872b84de88074c77fec060d1a,
title = "InAs-channel metal-oxide-semiconductor HEMTs with atomic-layer-deposited Al2O3 gate dielectric",
abstract = "The performance of n-type metal-oxide-semiconductor HEMTs with an InAs-channel using atomic-layer-deposited Al2O3 as gate dielectric has been fabricated and evaluated. The device performances of a set of scaled transistors with different gate dielectric thicknesses of 3, 5 and 7 nm have been investigated to determine whether the architecture of Al 2O3 dielectric on InAs-channel HEMT can demonstrate good properties at low bias conditions for high-speed, high performance CMOS applications. The results indicate that the high-performance InAs-channel MOS-HEMTs with an ALD Al2O3 gate dielectric are promising candidates for advanced post-Si CMOS applications.",
author = "Chang, {Chia Yuan} and Chang, {Edward Yi} and Huang, {Wei Ching} and Su, {Yung Hsuan} and Trinh, {Hai Dang} and Heng-Tung Hsu and Yasuyuki Miyamoto",
year = "2009",
doi = "10.1149/1.3206609",
language = "English",
isbn = "9781566777438",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "6",
pages = "87--92",
booktitle = "ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7",
edition = "6",
note = "7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society ; Conference date: 05-10-2009 Through 07-10-2009",
}