In-situ studies of the crystallization of amorphous CoSi2 films

David A. Smith; King-Ning Tu; B. Z. Weiss

doi:10.1016/0304-3991(89)90176-9

In-situ studies of the crystallization of amorphous CoSi₂ films

David A. Smith^*, King-Ning Tu, B. Z. Weiss

^*此作品的通信作者

國際半導體產業學院

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

The crystallization of amorphous CoSi₂ is an ideal phase transformation for in-situ studies. This system satisfies the assumptions underlying the Johnson-Mehl-Avrami analysis rather well and produces a microstructure which can be modelled realistically. The nucleation rate can be measured independently of the growth rate. The activation energy for growth is found to be 1.1 eV/atom and microstructural observations suggest that the interface between amorphous and crystalline material is likely to advance by a ledge mechanism.

原文	English
頁（從 - 到）	90-96
頁數	7
期刊	Ultramicroscopy
卷	30
發行號	1-2
DOIs	https://doi.org/10.1016/0304-3991(89)90176-9
出版狀態	Published - 1 1月 1989

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10.1016/0304-3991(89)90176-9

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N2 - The crystallization of amorphous CoSi2 is an ideal phase transformation for in-situ studies. This system satisfies the assumptions underlying the Johnson-Mehl-Avrami analysis rather well and produces a microstructure which can be modelled realistically. The nucleation rate can be measured independently of the growth rate. The activation energy for growth is found to be 1.1 eV/atom and microstructural observations suggest that the interface between amorphous and crystalline material is likely to advance by a ledge mechanism.

AB - The crystallization of amorphous CoSi2 is an ideal phase transformation for in-situ studies. This system satisfies the assumptions underlying the Johnson-Mehl-Avrami analysis rather well and produces a microstructure which can be modelled realistically. The nucleation rate can be measured independently of the growth rate. The activation energy for growth is found to be 1.1 eV/atom and microstructural observations suggest that the interface between amorphous and crystalline material is likely to advance by a ledge mechanism.

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ER -

In-situ studies of the crystallization of amorphous CoSi2 films

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In-situ studies of the crystallization of amorphous CoSi₂ films