Improving the Performance of ZnO Thin-Film Transistors with ZnON Source/Drain Contacts

Chin I. Kuan, Horng-Chih Lin*, Pei-Wen Li

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

Motivation to study the ZnO channel for thin-film transistors (TFTs) is strong in light of its decent high mobility and large bandgap, enabling simultaneous coexistence of high on current and low off-state leakage. Nevertheless, the improvement in device performance for ZnO TFTs has not been fully exercised and even the field-effect mobility (μFE) is degraded with downscaling the channel length owing to considerable series source/drain (S/D) resistance (RSD). In this paper, we show that inserting a thin contact layer of ZnON between the ZnO channel and Al S/D effectively suppresses the formation of interfacial layer of AlOx and thereby reduces RSD dramatically. This is evidenced by a significant reduction in R SD from 30.1 to 14.4 Ω μ m measured on 0.5-μ m ZnO TFTs with a ZnON contact layer or not, leading to an improvement in μ FE from 18.2 to 29.6 cm 2 Vs $.

原文English
文章編號7934028
頁(從 - 到)2849-2853
頁數5
期刊IEEE Transactions on Electron Devices
64
發行號7
DOIs
出版狀態Published - 1 7月 2017

指紋

深入研究「Improving the Performance of ZnO Thin-Film Transistors with ZnON Source/Drain Contacts」主題。共同形成了獨特的指紋。

引用此