Improving the Performance of Charge Trapping Memtransistor as Synaptic Device by Ti-Doped HfO₂

Keyphrases

• Charge Trapping 100%
• Ti-doped 100%
• Doped HfO2 100%
• Synaptic Device 100%
• Memtransistors 100%
• Charge Trapping Layer 66%
• Transmission Electron Microscope 16%
• Recognition Accuracy 16%
• Pattern Recognition 16%
• Capacitors 16%
• HfO2 16%
• Conductance 16%
• Gate Stack 16%
• Memory Window 16%
• Charge Decay 16%
• Electron Microscopy Images 16%
• Storage Characteristics 16%
• Atomic Layer Deposition 16%
• Nonlinearity 16%
• Trap Model 16%
• X-ray Photoelectron Spectroscopy Analysis 16%
• Energy Band Structure 16%
• Cycle Ratio 16%
• Germanium Channel 16%
• Channel Charges 16%
• Convolutional Neural Network Model 16%
• Band Engineering 16%
• Trap Distribution 16%
• Decay Model 16%
• Potentiation 16%
• Image Ray 16%
• Retention Model 16%
• Multilayer Perceptron Neural Network (MLPNN) 16%
• Ti Dopant 16%
• Neural Network Accelerator 16%
• Multi-layer Convolutional Neural Network 16%
• NeuroSim 16%

Engineering

• Synaptic Device 100%
• Dopants 20%
• Recognition Accuracy 20%
• Pattern Recognition 20%
• Ray Photoelectron Spectroscopy 20%
• Band Structure 20%
• Engineering 20%
• Gate Stack 20%
• Network Model 20%
• Atomic Layer Deposition 20%
• Thermal Model 20%
• Energy Band 20%
• Hardware Accelerator 20%
• Charge Decay 20%
• Nonlinearity 20%
• Perceptron 20%
• Convolutional Neural Network 20%

Material Science

• Charge Trapping 100%
• Doping (Additives) 10%
• Pattern Recognition 10%
• X-Ray Photoelectron Spectroscopy 10%
• Electronic Band Structure 10%
• Capacitor 10%
• Germanium 10%