@inproceedings{8ccd33e1c8a84d2d8f8727010d3bddef,
title = "Improving the electrical properties of NILC poly-Si films using gettering α-Si film through contact holes",
abstract = " Ni-metal-induced lateral crystallization (NILC) of amorphous Si (α-Si) has been used to fabricate polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, often leads to trap Ni and NiSi 2 precipitates, which degrade the device performance. In this study, α-Si film was coated on the top of contact holes as Ni-gettering layer. It was found that the GETR-TFT exhibited an enhanced field-effect mobility, steeper subthreshold swing, lower minimum leakage current. These improvements are consistent with a measured reduction in the trap state density in the channel.",
author = "Chen-Ming Hu and Chao, {Yu Cheng} and Yew-Chuhg Wu",
year = "2008",
month = dec,
day = "1",
doi = "10.1149/1.2980553",
language = "English",
isbn = "9781566776554",
series = "ECS Transactions",
number = "9",
pages = "207--210",
booktitle = "ECS Transactions - Thin Film Transistors 9, TFT 9",
edition = "9",
note = "Thin Film Transistors 9, TFT 9 - 214th ECS Meeting ; Conference date: 13-10-2008 Through 16-10-2008",
}