Improving the electrical properties of NILC Poly-Si films using a gettering substrate

Chen-Ming Hu*, Yew-Chuhg Wu, Chi Ching Lin

*此作品的通信作者

研究成果: Article同行評審

24 引文 斯高帕斯(Scopus)

摘要

Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate polycrystalline silicon (poly-Si) thin-film transistors. However, current crystallization technology often leads to Ni and NiSi2 precipitates being trapped, thus degrading the performance of the device. We proposed using α-Si-coated wafers as Ni-gettering substrates. After bonding the gettering substrate with the NILC poly-Si film, both the Ni-metal impurity within the NILC poly-Si film and the leakage current were greatly reduced, thus increasing the ON/OFF current ratio.

原文English
頁(從 - 到)1000-1003
頁數4
期刊IEEE Electron Device Letters
28
發行號11
DOIs
出版狀態Published - 1 11月 2007

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