Improving the Electrical Performance of a Quantum Well FET with a Shell Doping Profile by Heterojunction Optimization

Engineering & Materials Science

• Computer simulation 17%
• Electron affinity 62%
• Energy barriers 49%
• Energy gap 36%
• Field effect transistors 68%
• Heterojunctions 83%
• Leakage currents 34%
• Materials properties 26%
• Nanowires 39%
• Permittivity 64%
• Semiconductor doping 96%
• Semiconductor materials 28%
• Semiconductor quantum wells 100%
• Transistors 27%
• Valence bands 57%

Chemical Compounds

• Application 10%
• Band Gap 24%
• Band Offset 50%
• Dielectric Constant 58%
• Energy Barrier 30%
• Kd 24%
• Leakage Current 42%
• Nanowire 27%
• Semiconductor 24%
• Simulation 20%
• Valence Band 35%