Improving the Electrical Performance of a Quantum Well FET with a Shell Doping Profile by Heterojunction Optimization

Malkundi Puttaveerappa Vijay Kumar, Chia Ying Hu, Amey Mahadev Walke, Kuo Hsing Kao*, Tien-Sheng Chao

*此作品的通信作者

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

This paper investigates the impacts of typical semiconductor material properties-electron affinity, bandgap, and dielectric constant, on the electrical performance of a p-type core-shell heterojunction nanowire FET by numerical simulations. At the heterojunction, a valence band offset of 200 meV forms a sufficient energy barrier confining the holes in the quantum well, resulting in the optimal OFF-state current. A higher dielectric constant of the shell region is found to be able to decrease the leakage current of the device. The optimum conditions from the parameter analysis are demonstrated by a realistic and achievable material combination of Si/SiGe for the core-shell configuration. This paper provides physical insights into the materialwise impacts for designing the proposed transistor showing the reduced OFF-current and a better subthreshold swing for low-power applications.

原文English
文章編號7990547
頁(從 - 到)3563-3568
頁數6
期刊IEEE Transactions on Electron Devices
64
發行號9
DOIs
出版狀態Published - 1 9月 2017

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