Keyphrases
Molecular Beam Epitaxy
100%
Electrical Characteristics
100%
GaN Films
100%
Optical Characteristics
100%
Growth Form
100%
Mode Transition
100%
2D Growth
100%
Electrical Properties
60%
Crystal Quality
40%
Optical Properties
40%
GaN-based
40%
High Electron Mobility Transistor
40%
Breakdown Voltage
40%
Metal-organic Chemical Vapor Deposition (MOCVD)
20%
Comprehensive Investigation
20%
Surface Roughness
20%
Surface Morphology
20%
Leakage Current
20%
Pit Size
20%
Smooth Surface
20%
Low Defect
20%
Growth Temperature
20%
Film Quality
20%
In Films
20%
Root-mean-square Roughness
20%
Yellow Emission
20%
Surface Characteristics
20%
Edge Dislocation
20%
Channel Layer
20%
Growth Techniques
20%
Substrate Growth
20%
Characteristic Roots
20%
Vertical Leakage
20%
Surface pits
20%
Transition Approaches
20%
Engineering
Breakdown Voltage
100%
Growth Mode
100%
Surface Morphology
50%
Crystal Quality
50%
Crystalline Quality
50%
Smooth Surface
50%
Growth Temperature
50%
Film Quality
50%
Root Mean Square
50%
Square Roughness
50%
Related Defect
50%
Channel Layer
50%
Rich Condition
50%
Edge Dislocation
50%
Material Science
Film
100%
Electrical Property
100%
Molecular Beam Epitaxy
100%
Transistor
33%
Electron Mobility
33%
Optical Property
33%
Density
16%
Surface Roughness
16%
Surface Morphology
16%
Surface Property
16%
Surface (Surface Science)
16%
Edge Dislocation
16%