Improving linearity by introducing Al in HfO2 as a memristor synapse device

Sridhar Chandrasekaran, Firman Mangasa Simanjuntak, R. Saminathan, Debashis Panda, Tseung-Yuen Tseng

研究成果: Article同行評審

58 引文 斯高帕斯(Scopus)

摘要

Artificial synapse having good linearity is crucial to achieve an efficient learning process in neuromorphic computing. It is found that the synaptic linearity can be enhanced by engineering the doping region across the switching layer. The nonlinearity of potentiation and depression of the pure device is 36% and 91%, respectively; meanwhile, the nonlinearity after doping can be suppressed to be 22% (potentiation) and 60% (depression). Henceforth, the learning accuracy of the doped device is 91% with only 13 iterations; meanwhile, the pure device is 78%. A detailed conduction mechanism to understand this phenomenon is proposed.

原文English
文章編號445205
頁(從 - 到)1-9
頁數9
期刊Nanotechnology
30
發行號44
DOIs
出版狀態Published - 1 8月 2019

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