Improving Interface State Density of TiN/HfO2/IL Gate Stack on Si0.5Ge0.5 by Optimization of Post Metallization Annealing and Oxygen Pressure

Meng Chien Lee*, Wei Li Lee, Cheng Yu Yu, Hung Ju Lin, Hsien Ho Liu, Jun Lin Zhang, Shin Yuan Wang, Chen-Han Chou, Guang Li Luo, Chao-Hsin Chien

*此作品的通信作者

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this paper, we fabricated TiN/HfO2-based gate stacks on epi- Si0.5 Ge0.5 substrates with remarkably low interface trap density (Dit) by optimizing the temperature and pressure in the annealing ambient. We found that oxygen in ambient play a subtle role in the resultant properties of the gate stack. During annealing, insufficient oxygen supply to the stack cannot effectively repair the slow oxide traps, while too much oxygen will cause excess SiGe surface oxidation and lead to higher Dit. For the first time, the impact of diffused oxygen during thermal processing on the electrical properties of the TiN/HfO2/IL/SiGe gate stack is systematically investigated.

原文English
主出版物標題2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
發行者Institute of Electrical and Electronics Engineers Inc.
頁面102-103
頁數2
ISBN(電子)9781728142326
DOIs
出版狀態Published - 8月 2020
事件2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 - Hsinchu, Taiwan
持續時間: 10 8月 202013 8月 2020

出版系列

名字2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

Conference

Conference2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
國家/地區Taiwan
城市Hsinchu
期間10/08/2013/08/20

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