@inproceedings{bb6ba8409b2e43e1a2ad66f489b612d9,
title = "Improving Interface State Density of TiN/HfO2/IL Gate Stack on Si0.5Ge0.5 by Optimization of Post Metallization Annealing and Oxygen Pressure",
abstract = "In this paper, we fabricated TiN/HfO2-based gate stacks on epi- Si0.5 Ge0.5 substrates with remarkably low interface trap density (Dit) by optimizing the temperature and pressure in the annealing ambient. We found that oxygen in ambient play a subtle role in the resultant properties of the gate stack. During annealing, insufficient oxygen supply to the stack cannot effectively repair the slow oxide traps, while too much oxygen will cause excess SiGe surface oxidation and lead to higher Dit. For the first time, the impact of diffused oxygen during thermal processing on the electrical properties of the TiN/HfO2/IL/SiGe gate stack is systematically investigated.",
author = "Lee, {Meng Chien} and Lee, {Wei Li} and Yu, {Cheng Yu} and Lin, {Hung Ju} and Liu, {Hsien Ho} and Zhang, {Jun Lin} and Wang, {Shin Yuan} and Chen-Han Chou and Luo, {Guang Li} and Chao-Hsin Chien",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 ; Conference date: 10-08-2020 Through 13-08-2020",
year = "2020",
month = aug,
doi = "10.1109/VLSI-TSA48913.2020.9203589",
language = "English",
series = "2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "102--103",
booktitle = "2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020",
address = "美國",
}