Improving Interface State Density and Thermal Stability of High-κ Gate Stack Through High-Vacuum Annealing on Si0.5Ge0.5

Wei Li Lee, Cheng Yu Yu, Jun Lin Zhang, Guang Li Luo, Chao-Hsin Chien*

*此作品的通信作者

    研究成果: Article同行評審

    1 引文 斯高帕斯(Scopus)

    摘要

    We fabricated HfO2-based gate stacks on epi-Si0.5Ge0.5 substrates and investigated the effect of thermal treatment on their structural and electrical properties at varying temperatures and pressures in oxygen ambient. The thermal treatment process led to severe degradation of interface quality as the temperature increased. Material analyses indicated that annealing in oxygen ambient resulted in oxygen diffusion from the high-κ material to the SiGe surface, causing undesirable SiGe reoxidation. In high-vacuum annealing, an interface state density of approximately 1.4 × 1011 eV-1 cm-2 and a thermal stability of up to 500 °C were achieved for the gate stack on SiGe.

    原文English
    文章編號8667385
    頁(從 - 到)678-681
    頁數4
    期刊IEEE Electron Device Letters
    40
    發行號5
    DOIs
    出版狀態Published - 1 五月 2019

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