Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS

Chun Yu Lin; Mei Lian Fan; Ming-Dou Ker; Li Wei Chu; Jen Chou Tseng; Ming Hsiang Song

doi:10.1109/IRPS.2014.6861132

Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS

Chun Yu Lin
, Mei Lian Fan
, Ming-Dou Ker
, Li Wei Chu
, Jen Chou Tseng
, Ming Hsiang Song

研究成果: Conference contribution › 同行評審

15 引文斯高帕斯（Scopus）

摘要

To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.

原文	English
主出版物標題	2014 IEEE International Reliability Physics Symposium, IRPS 2014
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	EL.1.1-EL.1.4
ISBN（列印）	9781479933167
DOIs	https://doi.org/10.1109/IRPS.2014.6861132
出版狀態	Published - 2014
事件	52nd IEEE International Reliability Physics Symposium, IRPS 2014 - Waikoloa, HI, 美國持續時間: 1 6月 2014 → 5 6月 2014

出版系列

名字	IEEE International Reliability Physics Symposium Proceedings
ISSN（列印）	1541-7026

Conference

Conference	52nd IEEE International Reliability Physics Symposium, IRPS 2014
國家/地區	美國
城市	Waikoloa, HI
期間	1/06/14 → 5/06/14

存取文件

10.1109/IRPS.2014.6861132

其它文件與鏈接

Link to publication in Scopus

引用此

Lin, C. Y., Fan, M. L., Ker, M.-D., Chu, L. W., Tseng, J. C., & Song, M. H. (2014). Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS. 於 2014 IEEE International Reliability Physics Symposium, IRPS 2014 (頁 EL.1.1-EL.1.4). 文章 6861132 (IEEE International Reliability Physics Symposium Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2014.6861132

@inproceedings{3972800072844874aa3079622d9b5017,

title = "Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS",

abstract = "To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.",

keywords = "Diode, electrostatic discharge (ESD), radio-frequency (RF), silicon-controlled rectifier (SCR)",

author = "Lin, \{Chun Yu\} and Fan, \{Mei Lian\} and Ming-Dou Ker and Chu, \{Li Wei\} and Tseng, \{Jen Chou\} and Song, \{Ming Hsiang\}",

year = "2014",

doi = "10.1109/IRPS.2014.6861132",

language = "English",

isbn = "9781479933167",

series = "IEEE International Reliability Physics Symposium Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "EL.1.1--EL.1.4",

booktitle = "2014 IEEE International Reliability Physics Symposium, IRPS 2014",

address = "美國",

note = "52nd IEEE International Reliability Physics Symposium, IRPS 2014 ; Conference date: 01-06-2014 Through 05-06-2014",

}

Lin, CY, Fan, ML, Ker, M-D, Chu, LW, Tseng, JC & Song, MH 2014, Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS. 於 2014 IEEE International Reliability Physics Symposium, IRPS 2014., 6861132, IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., 頁 EL.1.1-EL.1.4, 52nd IEEE International Reliability Physics Symposium, IRPS 2014, Waikoloa, HI, 美國, 1/06/14. https://doi.org/10.1109/IRPS.2014.6861132

Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS. / Lin, Chun Yu; Fan, Mei Lian; Ker, Ming-Dou 等.
2014 IEEE International Reliability Physics Symposium, IRPS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. EL.1.1-EL.1.4 6861132 (IEEE International Reliability Physics Symposium Proceedings).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS

AU - Lin, Chun Yu

AU - Fan, Mei Lian

AU - Ker, Ming-Dou

AU - Chu, Li Wei

AU - Tseng, Jen Chou

AU - Song, Ming Hsiang

PY - 2014

Y1 - 2014

N2 - To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.

AB - To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.

KW - Diode

KW - electrostatic discharge (ESD)

KW - radio-frequency (RF)

KW - silicon-controlled rectifier (SCR)

UR - https://www.scopus.com/pages/publications/84905662700

U2 - 10.1109/IRPS.2014.6861132

DO - 10.1109/IRPS.2014.6861132

M3 - Conference contribution

AN - SCOPUS:84905662700

SN - 9781479933167

T3 - IEEE International Reliability Physics Symposium Proceedings

SP - EL.1.1-EL.1.4

BT - 2014 IEEE International Reliability Physics Symposium, IRPS 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 52nd IEEE International Reliability Physics Symposium, IRPS 2014

Y2 - 1 June 2014 through 5 June 2014

ER -

Lin CY, Fan ML, Ker MD, Chu LW, Tseng JC, Song MH. Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS. 於 2014 IEEE International Reliability Physics Symposium, IRPS 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. EL.1.1-EL.1.4. 6861132. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS.2014.6861132

Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS

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