Improving electrical properties of bottom-gate poly(3-hexylthiophene) thin-film transistor using CF4 plasma treatment

Hung Chi Wu*, Chao-Hsin Chien

*此作品的通信作者

    研究成果: Article同行評審

    2 引文 斯高帕斯(Scopus)

    摘要

    In this letter, the effect of CF4 plasma treatment on poly(3-hexylthiophene)-based organic thin-film transistors has been investigated. It was found that CF4 plasma treatment on the source/drain electrode can reduce contact resistance and increase mobility. The CF4 plasma treatment can increase the mobility from 0.0021 to 0.0102 cm2Vs and decrease the contact resistance by about 70%. Moreover, the CF4 plasma treatment is compatible with the bottom-gate bottom-contact structure without degrading the SiO2 layer.

    原文English
    文章編號6471742
    頁(從 - 到)538-540
    頁數3
    期刊IEEE Electron Device Letters
    34
    發行號4
    DOIs
    出版狀態Published - 11 三月 2013

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