Improving electrical properties of bottom-gate poly(3-hexylthiophene) thin-film transistor using CF₄ plasma treatment

In this letter, the effect of CF₄ plasma treatment on poly(3-hexylthiophene)-based organic thin-film transistors has been investigated. It was found that CF₄ plasma treatment on the source/drain electrode can reduce contact resistance and increase mobility. The CF₄ plasma treatment can increase the mobility from 0.0021 to 0.0102 cm²Vs and decrease the contact resistance by about 70%. Moreover, the CF₄ plasma treatment is compatible with the bottom-gate bottom-contact structure without degrading the SiO₂ layer.