Improving Electrical Performances of p-Type SnO Thin-Film Transistors Using Double-Gated Structure

Chia Wen Zhong; Horng-Chih Lin; Kou Chen Liu; Tiao Yuan Huang

doi:10.1109/LED.2015.2465144

Improving Electrical Performances of p-Type SnO Thin-Film Transistors Using Double-Gated Structure

Chia Wen Zhong, Horng-Chih Lin, Kou Chen Liu, Tiao Yuan Huang

電子研究所

研究成果: Article › 同行評審

27 引文斯高帕斯（Scopus）

摘要

p-type SnO thin-film transistors (TFTs) using a nominally symmetrical double-gated (DG) structure were studied in this letter. The top and bottom gates can be biased independently (single-gated mode) or jointly to switch the device (DG mode). For the latter operation, it is shown that ON current, subthreshold swing, and OFF-state current of the SnO TFT are all improved as compared with the operations when only one of the two gates is biased. As the device is operated under the DG mode, field-effect mobility of 6.54 cm²/V-s, high ON/OFF current ratio of > 10^{5}, and subthreshold swing of 143 mV/decade are obtained. Moreover, the capability of the device in tuning its transfer characteristics under the single-gated operation with the bias applied to the opposite gate is also confirmed.

原文	American English
文章編號	7192606
頁（從 - 到）	1053-1055
頁數	3
期刊	Ieee Electron Device Letters
卷	36
發行號	10
DOIs	https://doi.org/10.1109/LED.2015.2465144
出版狀態	Published - 10月 2015

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title = "Improving Electrical Performances of p-Type SnO Thin-Film Transistors Using Double-Gated Structure",

abstract = "p-type SnO thin-film transistors (TFTs) using a nominally symmetrical double-gated (DG) structure were studied in this letter. The top and bottom gates can be biased independently (single-gated mode) or jointly to switch the device (DG mode). For the latter operation, it is shown that ON current, subthreshold swing, and OFF-state current of the SnO TFT are all improved as compared with the operations when only one of the two gates is biased. As the device is operated under the DG mode, field-effect mobility of 6.54 cm2/V-s, high ON/OFF current ratio of > 10^{5}, and subthreshold swing of 143 mV/decade are obtained. Moreover, the capability of the device in tuning its transfer characteristics under the single-gated operation with the bias applied to the opposite gate is also confirmed.",

keywords = "SnO, double gate, metal oxide, thin-film transistor",

author = "Zhong, {Chia Wen} and Horng-Chih Lin and Liu, {Kou Chen} and Huang, {Tiao Yuan}",

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N2 - p-type SnO thin-film transistors (TFTs) using a nominally symmetrical double-gated (DG) structure were studied in this letter. The top and bottom gates can be biased independently (single-gated mode) or jointly to switch the device (DG mode). For the latter operation, it is shown that ON current, subthreshold swing, and OFF-state current of the SnO TFT are all improved as compared with the operations when only one of the two gates is biased. As the device is operated under the DG mode, field-effect mobility of 6.54 cm2/V-s, high ON/OFF current ratio of > 10^{5}, and subthreshold swing of 143 mV/decade are obtained. Moreover, the capability of the device in tuning its transfer characteristics under the single-gated operation with the bias applied to the opposite gate is also confirmed.

AB - p-type SnO thin-film transistors (TFTs) using a nominally symmetrical double-gated (DG) structure were studied in this letter. The top and bottom gates can be biased independently (single-gated mode) or jointly to switch the device (DG mode). For the latter operation, it is shown that ON current, subthreshold swing, and OFF-state current of the SnO TFT are all improved as compared with the operations when only one of the two gates is biased. As the device is operated under the DG mode, field-effect mobility of 6.54 cm2/V-s, high ON/OFF current ratio of > 10^{5}, and subthreshold swing of 143 mV/decade are obtained. Moreover, the capability of the device in tuning its transfer characteristics under the single-gated operation with the bias applied to the opposite gate is also confirmed.

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Improving Electrical Performances of p-Type SnO Thin-Film Transistors Using Double-Gated Structure

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