Improving electrical characteristics of High-k NiTiO dielectric with nitrogen ion implantation

Wen Luh Yang*, Tien-Sheng Chao, Shine China Chen, Chin Hao Yang, Wu Chin Peng

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A new high-dielectric-constant (k) NiTiO dielectric film with a low temperature has been investigated for the first time. The k of the NiTiO film was estimated to be larger than 40. The roughness of the NiTiO dielectric film to nitrogen ion implantation (I/I) was uniform, thus causing a low leakage current (<10-9 A) and a high breakdown voltage (<25 MV/cm 2). These results are superior to those reported in the literature, suggesting a potential use of the NiTiO film as dielectric for future RF/mixed IC applications.

原文English
頁(從 - 到)6902-6904
頁數3
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
發行號9 A
DOIs
出版狀態Published - 7 9月 2006

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