Improving electrical characteristics of High-k NiTiO dielectric with nitrogen ion implantation

Wen Luh Yang; Tien-Sheng Chao; Shine China Chen; Chin Hao Yang; Wu Chin Peng

doi:10.1143/JJAP.45.6902

Improving electrical characteristics of High-k NiTiO dielectric with nitrogen ion implantation

Wen Luh Yang^*, Tien-Sheng Chao, Shine China Chen, Chin Hao Yang, Wu Chin Peng

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

摘要

A new high-dielectric-constant (k) NiTiO dielectric film with a low temperature has been investigated for the first time. The k of the NiTiO film was estimated to be larger than 40. The roughness of the NiTiO dielectric film to nitrogen ion implantation (I/I) was uniform, thus causing a low leakage current (<10^-9 A) and a high breakdown voltage (<25 MV/cm ²). These results are superior to those reported in the literature, suggesting a potential use of the NiTiO film as dielectric for future RF/mixed IC applications.

原文	English
頁（從 - 到）	6902-6904
頁數	3
期刊	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
卷	45
發行號	9 A
DOIs	https://doi.org/10.1143/JJAP.45.6902
出版狀態	Published - 7 9月 2006

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abstract = "A new high-dielectric-constant (k) NiTiO dielectric film with a low temperature has been investigated for the first time. The k of the NiTiO film was estimated to be larger than 40. The roughness of the NiTiO dielectric film to nitrogen ion implantation (I/I) was uniform, thus causing a low leakage current (<10-9 A) and a high breakdown voltage (<25 MV/cm 2). These results are superior to those reported in the literature, suggesting a potential use of the NiTiO film as dielectric for future RF/mixed IC applications.",

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AU - Chao, Tien-Sheng

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AU - Yang, Chin Hao

AU - Peng, Wu Chin

PY - 2006/9/7

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AB - A new high-dielectric-constant (k) NiTiO dielectric film with a low temperature has been investigated for the first time. The k of the NiTiO film was estimated to be larger than 40. The roughness of the NiTiO dielectric film to nitrogen ion implantation (I/I) was uniform, thus causing a low leakage current (<10-9 A) and a high breakdown voltage (<25 MV/cm 2). These results are superior to those reported in the literature, suggesting a potential use of the NiTiO film as dielectric for future RF/mixed IC applications.

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JF - Japanese Journal of Applied Physics

IS - 9 A

ER -

Improving electrical characteristics of High-k NiTiO dielectric with nitrogen ion implantation

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