Improving Edge Dead Domain and Endurance in Scaled HfZrOxFeRAM

Yu De Lin, Po Chun Yeh, Ying Tsan Tang, Jian Wei Su, Hsin Yun Yang, Yu Hao Chen, Chih Pin Lin, Po Shao Yeh, Jui Chin Chen, Pei Jer Tzeng, Min Hung Lee, Tuo Hung Hou*, Shyh Shyuan Sheu, Wei Chung Lo, Chih I. Wu

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Scaling in area and voltage and its interplay with reliability of metal-ferroelectric-metal (MFM) capacitors are explored for scalable embedded FeRAM technology below 2× nm node. Size-dependent degradation in ferroelectricity due to the edge dead domains is identified both experimentally and theoretically. Optimization strategies including edge interface and work function tuning are detailed. The scaled MFM shows promising potential for achieving high maximum P_{rm{r}} (36 \mu rm{C}/\text{cm}{2}), small area (0.16 \mu rm{m}{2}), excellent reliability (> 10{11}) cycles; retention > 10 years at 85°C), a low operating voltage of 1.7 V, and a high array yield (100 % in lkb test macro).

原文English
主出版物標題2021 IEEE International Electron Devices Meeting, IEDM 2021
發行者Institute of Electrical and Electronics Engineers Inc.
頁面6.4.1-6.4.4
ISBN(電子)9781665425728
DOIs
出版狀態Published - 2021
事件2021 IEEE International Electron Devices Meeting, IEDM 2021 - San Francisco, United States
持續時間: 11 12月 202116 12月 2021

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2021-December
ISSN(列印)0163-1918

Conference

Conference2021 IEEE International Electron Devices Meeting, IEDM 2021
國家/地區United States
城市San Francisco
期間11/12/2116/12/21

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